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Growth by HVPE and characterizations of III-As nanowires

Abstract : In this work, we have performed for the first time the catalyst-free growth of III-As by hydride vapor phase epitaxy (HVPE). We first studied the self-assembled growth of InAs nanowires on Si(111) and the effect of the growth conditions on InAs nanowire growth. A kinetic model has been developed demonstrating that growth occurs through a direct condensation of gaseous InCl and As4 species on the substrate. Then, we studied the selective growth of InAs and GaAs on GaAs and Si substrates. The capability of the HVPE process to easily control the morphology of the nanostructures by simply modifying the growth parameters is highlighted. FTIR measurements performed on nanowires arrays have demonstrated the potential of InAs nanowires arrays for multi-spectral phototedetection in the infrared range. Photoluminescence characterizations are performed to study the optoelectronic properties of GaAs and InAs nanostructures. We demonstrated the selective growth (SAG) of InGaAs nanowires on GaAs and Si substrates. A preliminary study of the experimental parameters effect on the composition and morphology of the nanostructures has been conducted. We have shown that the ternary alloy composition can be controlled by varying the partial pressures of InCl and GaCl. Finally, a theoretical model, which links the vapor phase composition to the solid composition, is introduced.
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Submitted on : Tuesday, May 10, 2022 - 1:54:16 PM
Last modification on : Thursday, May 12, 2022 - 3:46:42 AM


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  • HAL Id : tel-03663765, version 1


Gabin Grégoire. Growth by HVPE and characterizations of III-As nanowires. Materials Science [cond-mat.mtrl-sci]. Université Clermont Auvergne, 2021. English. ⟨NNT : 2021UCFAC084⟩. ⟨tel-03663765⟩



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