Effect of temperature on Xe implantation-induced damage in 4H-SiC - Axe 3 : organisation structurale multiéchelle des matériaux Accéder directement au contenu
Article Dans Une Revue Journal of Physics: Conference Series Année : 2019

Effect of temperature on Xe implantation-induced damage in 4H-SiC

Résumé

Damage formation in implanted 4H-SiC was studied as a function of dose and temperature of implantation. At RT the maximal strain as well as the surface swelling linearly increases suggesting a point defects swelling. With increasing temperature the slope decreases due to irradiation-induced dynamic recovery with activation energy of 0.13±0.02eV. From 300°C the amorphisation is avoided and the strain build-up can be fitted according to a direct impact model. At 300°C the as-induced strain profile consists of three different zones of damage with depth, resulting from the damage accumulation in the near surface region, the formation of Xe-vacancy complexes in the ion distribution and beyond a zone of end-of-range strain associated with interstitial accumulation.

Domaines

Matériaux
Fichier principal
Vignette du fichier
Jiang_2019_J._Phys.%3A_Conf._Ser._1190_012015.pdf (1000.57 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02354267 , version 1 (07-11-2019)

Identifiants

Citer

C Jiang, A. Declémy, M.F. Beaufort, Alexandre Boulle, J-F. Barbot. Effect of temperature on Xe implantation-induced damage in 4H-SiC. Journal of Physics: Conference Series, 2019, 1190, pp.012015. ⟨10.1088/1742-6596/1190/1/012015⟩. ⟨hal-02354267⟩
41 Consultations
44 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More