Performances of AlInN/GaN HEMTs for Power Applications at Microwave Frequencies

Olivier Jardel (1) , Guillaume Callet (2) , J. Dufraisse , N. Sarazin (3) , E. Chartier (3) , Tibault Reveyrand (2) , M. Oualli (3) , D. Lancereau (3) , M.A. Di Forte Poisson (3) , S. Piotrowicz (3) , E. Morvan (3) , S.L. Delage (3)

1 C2S2
2 C2S2
3 III-V Lab - Alcatel-Thalès III-V lab

We report a comparative study on AlInN/GaN HEMTs on SiC substrates having four different processes and epitaxies. The outstanding performances of such devices will be explained thanks to intensive characterizations: pulsed-IV, [S]-parameters and load-pull at several frequencies from S to Ku bands. The measured transistors with 250nm gate lengths from different wafers delivered in cw: 10.8 W/mm with 60 % associated PAE at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10,24 GHz, and 4.2 W/mm with 43 % associated PAE at 18 GHz.

Olivier Jardel, Guillaume Callet, J. Dufraisse, N. Sarazin, E. Chartier, et al.. Performances of AlInN/GaN HEMTs for Power Applications at Microwave Frequencies. European Microwave Integrated Circuits Conference, EuMW 2010, Sep 2010, PARIS, France. pp.49-52. ⟨hal-00643348⟩