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Communication dans un congrès

Performances of AlInN/GaN HEMTs for Power Applications at Microwave Frequencies

Abstract : We report a comparative study on AlInN/GaN HEMTs on SiC substrates having four different processes and epitaxies. The outstanding performances of such devices will be explained thanks to intensive characterizations: pulsed-IV, [S]-parameters and load-pull at several frequencies from S to Ku bands. The measured transistors with 250nm gate lengths from different wafers delivered in cw: 10.8 W/mm with 60 % associated PAE at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10,24 GHz, and 4.2 W/mm with 43 % associated PAE at 18 GHz.
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Communication dans un congrès
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https://hal-unilim.archives-ouvertes.fr/hal-00643348
Contributeur : Véronique Maury <>
Soumis le : lundi 21 novembre 2011 - 16:33:39
Dernière modification le : mercredi 11 décembre 2019 - 16:26:04

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  • HAL Id : hal-00643348, version 1

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Olivier Jardel, Guillaume Callet, J. Dufraisse, N. Sarazin, E. Chartier, et al.. Performances of AlInN/GaN HEMTs for Power Applications at Microwave Frequencies. European Microwave Integrated Circuits Conference, EuMW 2010, Sep 2010, PARIS, France. pp.49-52. ⟨hal-00643348⟩

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