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Communication dans un congrès

First Demonstration of AlInN/GaN HEMTs Amplifiers at K band

Abstract : AlInN/GaN HEMTs have shown outstanding power performances for high frequency applications. In this paper, we present the first published power results of two K-band hybrid amplifier demonstrators at 20GHz and 26.5GHz using 0.25µm gate length devices. At these frequencies, respectively, cw RF output power of 4.5 Watts with 20% PAE and 1.65 W with 15.5 % of PAE were obtained. These state-of-the-art results confirm the potential of AlInN/GaN technology for high frequency applications.
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Communication dans un congrès
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Contributeur : Véronique Maury <>
Soumis le : mercredi 13 juin 2012 - 17:34:45
Dernière modification le : mercredi 11 décembre 2019 - 16:26:04


  • HAL Id : hal-00707893, version 1



Olivier Jardel, Guillaume Callet, D. Lancereau, Tibault Reveyrand, N. Sarazin, et al.. First Demonstration of AlInN/GaN HEMTs Amplifiers at K band. IEEE MTT-S Digest, IMS 2012, Jun 2012, Montréal -Canada, United States. pp.WEPG-13. ⟨hal-00707893⟩