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Communication dans un congrès

Wideband 50W Packaged GaN HEMT With Over 60% PAE Through Internal Harmonic Control in S-Band

Abstract : This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band. The internal matching circuits of the optimized package enable to reach a wider bandwidth and to confine harmonic impedances seen by the GaN powerbar into high-efficiency regions. In a 50Ω environment, the packaged GaN HEMT delivers 45 W output power with more than 55% PAE from 2.9 to 3.7 GHz.
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Communication dans un congrès
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https://hal-unilim.archives-ouvertes.fr/hal-00707898
Contributeur : Véronique Maury <>
Soumis le : mercredi 13 juin 2012 - 17:59:55
Dernière modification le : mardi 28 avril 2020 - 09:28:02

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  • HAL Id : hal-00707898, version 1

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Jérôme Chéron, Michel Campovecchio, Denis Barataud, Tibault Reveyrand, Michel Stanislawiak, et al.. Wideband 50W Packaged GaN HEMT With Over 60% PAE Through Internal Harmonic Control in S-Band. IEEE MTT-S Digest, IMS 2012, Jun 2012, Montréal -Canada, United States. pp.TH2D-2. ⟨hal-00707898⟩

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