Wideband 50W Packaged GaN HEMT With Over 60% PAE Through Internal Harmonic Control in S-Band

Abstract : This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band. The internal matching circuits of the optimized package enable to reach a wider bandwidth and to confine harmonic impedances seen by the GaN powerbar into high-efficiency regions. In a 50Ω environment, the packaged GaN HEMT delivers 45 W output power with more than 55% PAE from 2.9 to 3.7 GHz.