Wideband 50W Packaged GaN HEMT With Over 60% PAE Through Internal Harmonic Control in S-Band

Jérôme Chéron (1) , Michel Campovecchio (1) , Denis Barataud (1) , Tibault Reveyrand (1) , Michel Stanislawiak , Philippe Eudeline , D. Floriot

1 XLIM-C2S2 - C2S2

This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band. The internal matching circuits of the optimized package enable to reach a wider bandwidth and to confine harmonic impedances seen by the GaN powerbar into high-efficiency regions. In a 50Ω environment, the packaged GaN HEMT delivers 45 W output power with more than 55% PAE from 2.9 to 3.7 GHz.

Jérôme Chéron, Michel Campovecchio, Denis Barataud, Tibault Reveyrand, Michel Stanislawiak, et al.. Wideband 50W Packaged GaN HEMT With Over 60% PAE Through Internal Harmonic Control in S-Band. IEEE MTT-S Digest, IMS 2012, Jun 2012, Montréal -Canada, United States. pp.TH2D-2. ⟨hal-00707898⟩