Low Frequency Parasitic Effects in RF Transistors and their Impact on Power Amplifier Performances

Raymond Quéré (1) , Raphaël Sommet (1) , Philippe Bouysse (1) , Tibault Reveyrand (1) , Denis Barataud (1) , Jean-Pierre Teyssier (1) , Jean-Michel Nebus (1)

1 XLIM-C2S2 - C2S2

In this paper Low Frequency (LF) parasitic effects are assessed through three kinds of measurements. It is shown that LF S-parameters measurements allow to extract the thermal impedance of Heterojunction Bipolar Transistors (HBTs) and to put dispersive effects of AlGaN/GaN High Electron Mobility Transistors (HEMTs) into evidence. Large signal (RF pulsed and two tone intermodulation) confirm the impact of those parasitic effects on performances of Power Amplifiers.

Raymond Quéré, Raphaël Sommet, Philippe Bouysse, Tibault Reveyrand, Denis Barataud, et al.. Low Frequency Parasitic Effects in RF Transistors and their Impact on Power Amplifier Performances. IEEE Wireless and Microwave Technology Conference (WAMICON), Apr 2012, Cocoa Beach - Floride, United States. pp.1-5, ⟨10.1109/WAMICON.2012.6208471⟩. ⟨hal-00707903⟩