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Communication dans un congrès
Low Frequency Parasitic Effects in RF Transistors and their Impact on Power Amplifier Performances
Abstract : In this paper Low Frequency (LF) parasitic effects are assessed through three kinds of measurements. It is shown that LF S-parameters measurements allow to extract the thermal impedance of Heterojunction Bipolar Transistors (HBTs) and to put dispersive effects of AlGaN/GaN High Electron Mobility Transistors (HEMTs) into evidence. Large signal (RF pulsed and two tone intermodulation) confirm the impact of those parasitic effects on performances of Power Amplifiers.
https://hal-unilim.archives-ouvertes.fr/hal-00707903
Contributeur : Véronique Maury <>
Soumis le : mercredi 13 juin 2012 - 18:13:59
Dernière modification le : mardi 28 avril 2020 - 09:28:02
Contributeur : Véronique Maury <>
Soumis le : mercredi 13 juin 2012 - 18:13:59
Dernière modification le : mardi 28 avril 2020 - 09:28:02
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