Study and Design of High Efficiency Switch Mode GaN Power Amplifiers at L-band Frequency

Alaaeddine Ramadan (1) , Audrey Martin (1) , D. Sardin , Tibault Reveyrand (1) , Jean-Michel Nebus (1) , Philippe Bouysse (1) , L. Lapierre , J.F. Villemazet (2) , S. Forestier

1 C2S2
2 TAS - Thales Alenia Space [Toulouse]

Activities have been carried out to determine the best electrical operating conditions of GaN HEMT that enable maximum power added efficiency at L-Band for Switch Mode Power Amplifiers (class F, inverse class F and class E). Satellite Radio navigation applications (Galileo) are targeted. Maximization of power added efficiency is of prime importance to save DC power consumption, reduce self heating effects and improve reliability of power amplifiers. At 50V drain bias, a maximum power added efficiency (PAE) of 72% and 40.3 dBm output power (Pout) are obtained using class-F operating conditions at 2dB gain compression while a 75% PAE and 41.0 dBm Pout are obtained using class E at 3dB gain compression.

Alaaeddine Ramadan, Audrey Martin, D. Sardin, Tibault Reveyrand, Jean-Michel Nebus, et al.. Study and Design of High Efficiency Switch Mode GaN Power Amplifiers at L-band Frequency. International Conference on Advances in Computational Tools for Engineering Applications, ACTEA 2009, Jul 2009, Zouk Mosbeh, Lebanon. pp.117-120, ⟨10.1109/ACTEA.2009.5227923⟩. ⟨hal-00758906⟩