Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz

Guillaume Callet (1, 2) , Olivier Jardel (1) , Nadège Sarrazin (1) , E. Morvan (1) , M.A. Diforte-Poisson (1) , M. Oualli (1) , E. Chartier (1) , Tibault Reveyrand (2) , Jean-Pierre Teyssier (2) , S. Piotrowicz (1) , Raymond Quéré (2) , S.L. Delage (1)

1 III-V Lab - Alcatel-Thalès III-V lab
2 C2S2

An intensive electrical characterization of AlInN/GaN HEMT devices is presented in this paper. The performances of these devices based on new material are compared with AlGaN/GaN HEMT devices, thanks to the measurement results and the extraction of small-signal models. Our study is based on 8x75μm devices processed by 3-5 Lab. Load-pull characterizations at 18 GHz will show the advantages of this technology at high frequencies.

Domaines: Sciences de l'ingénieur [physics]; Electronique

Guillaume Callet, Olivier Jardel, Nadège Sarrazin, E. Morvan, M.A. Diforte-Poisson, et al.. Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz. 18th European Workshop on Heterostructure Technology (HETECH 2009), Nov 2009, Ulm, Germany. ⟨hal-00758953⟩