Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz

Guillaume Callet; Olivier Jardel; Nadège Sarrazin; E. Morvan; M.A. Diforte-Poisson; M. Oualli; E. Chartier; Tibault Reveyrand; Jean-Pierre Teyssier; S. Piotrowicz; Raymond Quéré; S.L. Delage

Communication dans un congrès

Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz

Guillaume Callet ^{1, 2} Olivier Jardel ¹ Nadège Sarrazin ¹ E. Morvan ¹ M.A. Diforte-Poisson ¹ M. Oualli ¹ E. Chartier ¹ Tibault Reveyrand ² Jean-Pierre Teyssier ² S. Piotrowicz ¹ Raymond Quéré ² S.L. Delage ¹

1 III-V Lab - Alcatel-Thalès III-V lab

2 C2S2

XLIM - XLIM

Abstract : An intensive electrical characterization of AlInN/GaN HEMT devices is presented in this paper. The performances of these devices based on new material are compared with AlGaN/GaN HEMT devices, thanks to the measurement results and the extraction of small-signal models. Our study is based on 8x75μm devices processed by 3-5 Lab. Load-pull characterizations at 18 GHz will show the advantages of this technology at high frequencies.

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-00758953
Contributeur : Véronique Maury <>
Soumis le : jeudi 29 novembre 2012 - 16:13:49
Dernière modification le : mercredi 11 décembre 2019 - 16:26:04

Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz

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Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz

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