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Communication dans un congrès

Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz

Abstract : An intensive electrical characterization of AlInN/GaN HEMT devices is presented in this paper. The performances of these devices based on new material are compared with AlGaN/GaN HEMT devices, thanks to the measurement results and the extraction of small-signal models. Our study is based on 8x75μm devices processed by 3-5 Lab. Load-pull characterizations at 18 GHz will show the advantages of this technology at high frequencies.
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Communication dans un congrès
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https://hal-unilim.archives-ouvertes.fr/hal-00758953
Contributeur : Véronique Maury <>
Soumis le : jeudi 29 novembre 2012 - 16:13:49
Dernière modification le : mercredi 11 décembre 2019 - 16:26:04

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  • HAL Id : hal-00758953, version 1

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Guillaume Callet, Olivier Jardel, Nadège Sarrazin, E. Morvan, M.A. Diforte-Poisson, et al.. Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz. 18th European Workshop on Heterostructure Technology (HETECH 2009), Nov 2009, Ulm, Germany. ⟨hal-00758953⟩

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