Multi-Harmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Microwave Theory and Techniques Année : 2012

Multi-Harmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers

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Wilfried Demenitroux
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Christophe Mazière
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Emmanuel Gatard
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Stéphane Dellier
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Michel Campovecchio
Raymond Quéré

Résumé

This paper presents a complete validation of the new behavioral model called the multiharmonic Volterra (MHV) model for designing wideband and highly efficient power amplifiers with packaged transistors in computer-aided design (CAD) software. The proposed model topology is based on the principle of the harmonic superposition introduced by the Agilent X-parameters, which is combined with the dynamic Volterra theory to give an MHV model that can handle short-term memory effects. The MHV models of 10- and 100-W packaged GaN transistors have been extracted from time-domain load-pull measurements under continuous wave and pulsed modes, respectively. Both MHV models have been implemented into CAD software to design 10- and 85-W power amplifiers in L- and S-bands. Finally, the first power amplifier exhibited mean measured values of 10-W output power and 65% power-added efficiency over 36% bandwidth centered at 2.2 GHz, while the second one exhibited 85-W output power and 65% drain efficiency over 50% bandwidth centered at 1.6 GHz.
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Dates et versions

hal-00911147 , version 1 (28-11-2013)

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Citer

Wilfried Demenitroux, Christophe Mazière, Emmanuel Gatard, Stéphane Dellier, Michel Campovecchio, et al.. Multi-Harmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers. IEEE Transactions on Microwave Theory and Techniques, 2012, 60 (6), pp.1817 - 1828. ⟨10.1109/TMTT.2012.2191305⟩. ⟨hal-00911147⟩

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