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Multi-Harmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers

Abstract : This paper presents a complete validation of the new behavioral model called the multiharmonic Volterra (MHV) model for designing wideband and highly efficient power amplifiers with packaged transistors in computer-aided design (CAD) software. The proposed model topology is based on the principle of the harmonic superposition introduced by the Agilent X-parameters, which is combined with the dynamic Volterra theory to give an MHV model that can handle short-term memory effects. The MHV models of 10- and 100-W packaged GaN transistors have been extracted from time-domain load-pull measurements under continuous wave and pulsed modes, respectively. Both MHV models have been implemented into CAD software to design 10- and 85-W power amplifiers in L- and S-bands. Finally, the first power amplifier exhibited mean measured values of 10-W output power and 65% power-added efficiency over 36% bandwidth centered at 2.2 GHz, while the second one exhibited 85-W output power and 65% drain efficiency over 50% bandwidth centered at 1.6 GHz.
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Soumis le : jeudi 28 novembre 2013 - 18:17:00
Dernière modification le : mercredi 22 décembre 2021 - 11:58:03




Wilfried Demenitroux, Christophe Mazière, Emmanuel Gatard, Stéphane Dellier, Michel Campovecchio, et al.. Multi-Harmonic Volterra Model Dedicated to the Design of Wideband and Highly Efficient GaN Power Amplifiers. IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2012, 60 (6), pp.1817 - 1828. ⟨10.1109/TMTT.2012.2191305⟩. ⟨hal-00911147⟩



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