 |
Communication dans un congrès
Modeling of Trap Induced Dispersion of Large Signal Dynamic characteristics of GaN HEMTs
Abstract : We propose here a non-linear GaN HEMT model for CAD including a trapping effects description consistent with both small-signal and large-signal operating modes. It takes into account the dynamics of the traps and then allows to accurately model the modulated large signal characteristics that are encountered in telecommunication and radar signals. This model is elaborated through low-frequency S-parameter measurements complementary to more classical pulsed-IV characterizations. A 8x75um AlInN/GaN HEMT model was designed and particularly validated in large-signal pulsed RF operation. It is also shown that thermal and trapping effects have opposite effects on the output conductance, thus opening the way for separate characterizations of the two effects
https://hal-unilim.archives-ouvertes.fr/hal-00911581
Contributeur : Michel Campovecchio Connectez-vous pour contacter le contributeur
Soumis le : vendredi 29 novembre 2013 - 14:21:19
Dernière modification le : mercredi 22 décembre 2021 - 11:58:03
Contributeur : Michel Campovecchio Connectez-vous pour contacter le contributeur
Soumis le : vendredi 29 novembre 2013 - 14:21:19
Dernière modification le : mercredi 22 décembre 2021 - 11:58:03
