Modeling of Trap Induced Dispersion of Large Signal Dynamic characteristics of GaN HEMTs

Olivier Jardel (1) , Sylvain Laurent (2) , Tibault Reveyrand (2) , Raymond Quéré (2) , Poornakarthik Nakkala (2) , Audrey Martin (2) , Stéphane Piotrowicz (1) , Michel Campovecchio (2) , Sylvain L. Delage (1)

1 III-V Lab - Alcatel-Thalès III-V lab
2 XLIM-C2S2 - C2S2

We propose here a non-linear GaN HEMT model for CAD including a trapping effects description consistent with both small-signal and large-signal operating modes. It takes into account the dynamics of the traps and then allows to accurately model the modulated large signal characteristics that are encountered in telecommunication and radar signals. This model is elaborated through low-frequency S-parameter measurements complementary to more classical pulsed-IV characterizations. A 8x75um AlInN/GaN HEMT model was designed and particularly validated in large-signal pulsed RF operation. It is also shown that thermal and trapping effects have opposite effects on the output conductance, thus opening the way for separate characterizations of the two effects

Domaines: Electronique

Olivier Jardel, Sylvain Laurent, Tibault Reveyrand, Raymond Quéré, Poornakarthik Nakkala, et al.. Modeling of Trap Induced Dispersion of Large Signal Dynamic characteristics of GaN HEMTs. IEEE Microwave Theory and Techniques Symposium - MTT-S, Jun 2013, Seattle, United States. pp.TU3F-6. ⟨hal-00911581⟩