Non linear model of InP/GaAsSb/InP DHBT process for design of a Q-Band MMIC oscillator

Sylvain Laurent (1) , Guillaume Callet (2) , Jean-Christophe Nallatamby (1) , Michel Prigent (1) , Virginie Nodjiadjim (3) , Muriel Riet (4)

1 C2S2
2 C2S2
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 III-V Lab - Alcatel-Thalès III-V lab

This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was made by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-m-long two-finger emitter. This paper describes the complete nonlinear modeling of heterojunction bipolar transistor used in this circuit. The interest of the methodology used to design this oscillator, is to be able to choose a nonlinear operating condition of the transistor from a study in amplifier mode. The oscillator simulation and measurement results are compared.

Domaines: Sciences de l'ingénieur [physics]

Sylvain Laurent, Guillaume Callet, Jean-Christophe Nallatamby, Michel Prigent, Virginie Nodjiadjim, et al.. Non linear model of InP/GaAsSb/InP DHBT process for design of a Q-Band MMIC oscillator. Microwave Integrated Circuits Conference (EuMIC), Paris : France (2010), Sep 2010, Paris, France. ⟨hal-00914672⟩