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Characterizations of InAlN/AlN/GaN Transistors for S-Band Applications

Abstract : InAlN/AlN/GaN high electron mobility transistors (HEMT) show interesting performances at level of static charac-teristics as well as behavior at microwave frequencies. This ar-ticle presents an analysis of the impact of topology of 2×100 μm devices on static I-V measurements and small signal parameters. The variations of the gate-drain distance and of the extension of the field plate linked to the source have an impact on the drain source output capacitance Cds and the drain source breakdown voltage VdsBK. Pulsed I-V measurements on a 2×250 μm device reveal a decrease of 32 % of drain current because of gate lag effects. Load-pull measurements of a 8×250 μm device show very good performances of InAlN/AlN/GaN HEMT technology in S band with a power added efficiency (PAE) of 70 % at 3.5 GHz.
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Contributeur : Philippe Bouysse Connectez-vous pour contacter le contributeur
Soumis le : vendredi 13 décembre 2013 - 08:59:47
Dernière modification le : lundi 4 avril 2022 - 10:40:40


  • HAL Id : hal-00918177, version 1



Jérémy Dufraisse, Guillaume Callet, Olivier Jardel, Eric Chartier, N. Sarazin, et al.. Characterizations of InAlN/AlN/GaN Transistors for S-Band Applications. 6th European Microwave Integrated Circuits Conference, Oct 2011, Manchester, United Kingdom. pp.1-4. ⟨hal-00918177⟩



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