State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC Amplifiers

Stéphane Piotrowicz (1) , Erwan Morvan (1) , Raphaël Aubry (1) , S. Bansropun (2) , T. Bouvet (2) , Eric Chartier (1) , T. Dean (2) , O. Drisse (1) , C. Dua (1) , D. Floriot , M.A. Diforte-Poisson (1) , Y. Gourdel (2) , A.J. Hydes (3) , J.C. Jacquet (1) , Olivier Jardel (1) , D. Lancereau (1) , J.O Mc Lean (3) , G. Lecoustre , Audrey Martin (4) , Z. Ouarch , Tibault Reveyrand (4) , Murielle Richard (1) , N. Sarazin (1) , D. Thenot (2) , S.L. Delage (1)

1 III-V Lab - Alcatel-Thalès III-V lab
2 Thales Research and Technology [Palaiseau]
3 QINETIQ
4 C2S2

Domaines: Sciences de l'ingénieur [physics]; Electronique

Stéphane Piotrowicz, Erwan Morvan, Raphaël Aubry, S. Bansropun, T. Bouvet, et al.. State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC Amplifiers. IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1- 4. ⟨hal-00918252⟩