Molecular dynamic simulation of diamond/silicon interfacial thermal conductance

Abstract : Abstract Non-equilibrium molecular dynamic simulation was employed to investigate the interfacial thermal conductance between diamond and silicon substrate. The interfacial thermal conductance was computed based on Fourier's law. The simulation was done at different temperature ranges and results show that the interfacial thermal conductance between diamond-silicon is proportional to temperature and increases with temperature even above Debye temperature of silicon. Enhancement of thermal boundary ...
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https://hal-unilim.archives-ouvertes.fr/hal-00922165
Contributeur : Dominique Baillargeat <>
Soumis le : lundi 23 décembre 2013 - 22:20:30
Dernière modification le : jeudi 11 janvier 2018 - 06:26:39

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  • HAL Id : hal-00922165, version 1

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Dominique Baillargeat, N. Khosravian, Mk Samani, Gc Loh, Gck Chen, et al.. Molecular dynamic simulation of diamond/silicon interfacial thermal conductance. Journal of Applied Physics, American Institute of Physics, 2013, pp.024907-024907-4. ⟨hal-00922165⟩

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