Molecular dynamic simulation of diamond/silicon interfacial thermal conductance

Dominique Baillargeat (1) , N. Khosravian (2) , Mk Samani (2) , Gc Loh (2) , Gck Chen (2) , Bk Tay (2)

1 XLIM-MINACOM - MINACOM
2 CINTRA / SEEE Nanyang Technological University

Abstract Non-equilibrium molecular dynamic simulation was employed to investigate the interfacial thermal conductance between diamond and silicon substrate. The interfacial thermal conductance was computed based on Fourier's law. The simulation was done at different temperature ranges and results show that the interfacial thermal conductance between diamond-silicon is proportional to temperature and increases with temperature even above Debye temperature of silicon. Enhancement of thermal boundary ...

Domaines: Sciences de l'ingénieur [physics]; Micro et nanotechnologies/Microélectronique

Dominique Baillargeat, N. Khosravian, Mk Samani, Gc Loh, Gck Chen, et al.. Molecular dynamic simulation of diamond/silicon interfacial thermal conductance. Journal of Applied Physics, 2013, pp.024907-024907-4. ⟨hal-00922165⟩