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Article Dans Une Revue Journal of Applied Physics Année : 2013

Molecular dynamic simulation of diamond/silicon interfacial thermal conductance

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Résumé

Abstract Non-equilibrium molecular dynamic simulation was employed to investigate the interfacial thermal conductance between diamond and silicon substrate. The interfacial thermal conductance was computed based on Fourier's law. The simulation was done at different temperature ranges and results show that the interfacial thermal conductance between diamond-silicon is proportional to temperature and increases with temperature even above Debye temperature of silicon. Enhancement of thermal boundary ...
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Dates et versions

hal-00922165 , version 1 (23-12-2013)

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  • HAL Id : hal-00922165 , version 1

Citer

Dominique Baillargeat, N. Khosravian, Mk Samani, Gc Loh, Gck Chen, et al.. Molecular dynamic simulation of diamond/silicon interfacial thermal conductance. Journal of Applied Physics, 2013, pp.024907-024907-4. ⟨hal-00922165⟩

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