Molecular dynamic simulation of diamond/silicon interfacial thermal conductance

Dominique Baillargeat; N. Khosravian; Mk Samani; Gc Loh; Gck Chen; Bk Tay

Molecular dynamic simulation of diamond/silicon interfacial thermal conductance

Dominique Baillargeat ¹ N. Khosravian ² Mk Samani ² Gc Loh ² Gck Chen ² Bk Tay ²

XLIM - XLIM

2 CINTRA / SEEE Nanyang Technological University

Abstract : Abstract Non-equilibrium molecular dynamic simulation was employed to investigate the interfacial thermal conductance between diamond and silicon substrate. The interfacial thermal conductance was computed based on Fourier's law. The simulation was done at different temperature ranges and results show that the interfacial thermal conductance between diamond-silicon is proportional to temperature and increases with temperature even above Debye temperature of silicon. Enhancement of thermal boundary ...

Type de document :

Article dans une revue

Domaine :

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-00922165
Contributeur : Dominique Baillargeat <>
Soumis le : lundi 23 décembre 2013 - 22:20:30
Dernière modification le : jeudi 11 janvier 2018 - 06:26:39

Molecular dynamic simulation of diamond/silicon interfacial thermal conductance

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Molecular dynamic simulation of diamond/silicon interfacial thermal conductance

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