Handling long-term memory effects in X-parameter model

Abstract : Since the last decade, the behavioral modeling of RF functional blocks (amplifiers, mixers, (de)modulators, etc.) has been a flourishing research domain that has led to a better overall understanding of the nonlinear dynamics impact to the circuit performances. Recently the X-parameter paradigm has been introduced. The formalism provides a comprehensive description of the relationships between all the harmonics of the scattered and incident power waves at the ports of a device, and represents a major advancement in RF circuit characterization. The formalism however still needs effective handling of the long term memory effects. In this paper, a simple and efficient approach is proposed to model long-term memory effects within X-parameter. It ensures both a simple extraction procedure and an efficient numerical implementation.
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https://hal-unilim.archives-ouvertes.fr/hal-00924290
Contributeur : Edouard Ngoya <>
Soumis le : lundi 6 janvier 2014 - 16:01:29
Dernière modification le : jeudi 11 janvier 2018 - 06:26:32

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Arnaud Soury, Edouard Ngoya. Handling long-term memory effects in X-parameter model. Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, Jun 2012, Montréal, Canada. pp.1 - 3, ⟨10.1109/MWSYM.2012.6257768⟩. ⟨hal-00924290⟩

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