Analysis of low frequency memory influence on solid state HPA intermodulation characteristics

Nicolas Le Gallou (1) , Jean-Michel Nebus (1) , Edouard Ngoya (1) , Hervé Burêt

1 IRCOM - Institut de Recherche en Communications Optiques et Microondes

A theoretical analysis using two-tone simulations and practical measurements of low frequency memory impact on third order intermodulation (IM3) on HBT as well as HFET power amplifiers is carried out. A particular emphasis is placed on the thermal origin for the HBT case and electrical origin for the HFET case of these low frequency nonlinear phenomena.

Domaines: Sciences de l'ingénieur [physics]; Electronique

Nicolas Le Gallou, Jean-Michel Nebus, Edouard Ngoya, Hervé Burêt. Analysis of low frequency memory influence on solid state HPA intermodulation characteristics. Microwave Symposium, 2001 IEEE MTT-S International, May 2001, Phoenix, United States. pp.979 - 982, ⟨10.1109/MWSYM.2001.967056⟩. ⟨hal-00924928⟩