Analysis of low frequency memory influence on solid state HPA intermodulation characteristics

Abstract : A theoretical analysis using two-tone simulations and practical measurements of low frequency memory impact on third order intermodulation (IM3) on HBT as well as HFET power amplifiers is carried out. A particular emphasis is placed on the thermal origin for the HBT case and electrical origin for the HFET case of these low frequency nonlinear phenomena.
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https://hal-unilim.archives-ouvertes.fr/hal-00924928
Contributeur : Edouard Ngoya <>
Soumis le : mardi 7 janvier 2014 - 12:09:37
Dernière modification le : jeudi 11 janvier 2018 - 06:17:28

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Nicolas Le Gallou, Jean-Michel Nebus, Edouard Ngoya, Hervé Burêt. Analysis of low frequency memory influence on solid state HPA intermodulation characteristics. Microwave Symposium, 2001 IEEE MTT-S International, May 2001, Phoenix, United States. pp.979 - 982, ⟨10.1109/MWSYM.2001.967056⟩. ⟨hal-00924928⟩

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