Wideband, High Efficiency, High Power GaN Amplifiers, Using MIC and Quasi-MMIC Technologies, in the 1-4GHz range.
Résumé
In this paper, the designs and experimental performances of wideband (higher than one octave) High efficiency, High Power Amplifiers (HPA) working in the 1-4 GHz range, using the same GaN process, are presented. They are based on the Bode-Fano integrals which can be applied to a trade-off calculation between bandwidth and efficiency. Firstly, a MIC wideband HPA, externally matched is presented. It generates a CW output power (Pout) greater than 40W, a Power Gain (GP) higher than 9.2dB and a corresponding Power Added Efficiency (PAE) (Drain Efficiency (DE)) ranged between 36-44% (40-48%) over the 1-3GHz bandwidth. Two other amplifiers have been designed upon the same theoretical methodology, with a passive GaAs MMIC circuit technology, enabling to reduce the final size down to 420mm2. The first internally matched Quasi-MMIC single ended HPA generates a Pulsed Pout greater than 25W, GP higher than 9.8dB and a corresponding PAE (DE) ranged between 37-52.5% (40-55%) over the 2-4GHz bandwidth. The second internally matched Quasi-MMIC HPA, based on balanced architecture, generates a pulsed Pout higher than 45W, GP higher than 9.5dB and PAE (DE) ranged between 33-44% (38-50%) over the 2-4GHz bandwidth. These results are among the best ones published in terms of PAE and Pout in instantaneous octave bandwidth in the 1 to 4 GHz frequency range.