Wideband High Efficiency High Power GaN Amplifiers Using MIC and Quasi-MMIC Technologies

Abstract : In this paper, the design and experimental results of a MIC Wideband (1-3GHz) and a balanced Quasi-MMIC wideband (2-4GHz), High Power GaN HEMT Power Amplifier (PA) are presented. The two designs, which use the same GaN process, are based on a theoretical study of the limitations in terms of trade-off between bandwidth and efficiency, derived from the Bode-Fano integrals, and applied to actual circuits. The MIC wideband PA, externally matched, generates an output CW power (Pout) greater than 40W, a Power Gain (G) higher than 9.2dB and a corresponding Power Added Efficiency (PAE) (Drain efficiency (DE)) ranged between 36-44% (40-48%) over the 1-3GHz bandwidth. A second amplifier, based on the same methodology, has been designed with a passive GaAs MMIC circuit technology. This fully and internally matched integrated amplifier size is lower than 420 mm2. The power performances of this quasi-MMIC balanced PA are the following in the 2-4 GHz bandwidth: Pulsed CW Pout higher than 45W (50W between 2.1-4 GHz), G higher than 9.5dB and PAE (DE) ranged between 33-44% (38-50%). These results are ones of the best results published in terms of PAE performances and bandwidth trade-offs.
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https://hal-unilim.archives-ouvertes.fr/hal-00940021
Contributeur : Denis Barataud <>
Soumis le : vendredi 31 janvier 2014 - 11:19:11
Dernière modification le : jeudi 11 janvier 2018 - 06:26:32

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  • HAL Id : hal-00940021, version 1

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Chamssedine Berrached, Diane Bouw, Marc Camiade, Denis Barataud. Wideband High Efficiency High Power GaN Amplifiers Using MIC and Quasi-MMIC Technologies. EuMW 2013, Oct 2013, Nuremberg, Germany. EuMC/EuMIC05-5 - pp. 1395 - 1398. ⟨hal-00940021⟩

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