Influence of the V/II ratio on the growth of groupe III nitride quantum dots deposited on silicon substrate by plasma enhanced chemical vapor deposition

Z. Bouchkour (1) , Pascal Tristant (2) , Christelle Dublanche-Tixier (2) , Cédric Jaoul (2) , Xavier Landreau (2) , Elsa Thune (3) , René Guinebretière (3)

1 SPCTS - Science des Procédés Céramiques et de Traitements de Surface
2 Axe 2 : procédés de traitements de surface
3 SPCTS-AXE3 - Axe 3 : organisation structurale multiéchelle des matériaux

Domaines: Matériaux

Z. Bouchkour, Pascal Tristant, Christelle Dublanche-Tixier, Cédric Jaoul, Xavier Landreau, et al.. Influence of the V/II ratio on the growth of groupe III nitride quantum dots deposited on silicon substrate by plasma enhanced chemical vapor deposition. World Journal of Engineering, 2011, Proceedings of the 19th Annual International Conference on Composites or Nano-Engeneering (ICCE-19), (Issue supplement), pp.143. ⟨hal-00942418⟩