Influence of the V/III ratio on the growth of group III nitride quantum dots deposited on silicon substrate by plasma enhanced chemical vapor deposition - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2011

Influence of the V/III ratio on the growth of group III nitride quantum dots deposited on silicon substrate by plasma enhanced chemical vapor deposition

(1) , (2) , (2) , (2) , , (3) , (3)
1
2
3

Domaines

Chimie Matériaux
Fichier non déposé

Dates et versions

hal-00944752 , version 1 (11-02-2014)

Identifiants

  • HAL Id : hal-00944752 , version 1

Citer

Z. Bouchkour, Pascal Tristant, Christelle Dublanche-Tixier, Cédric Jaoul, Xavier Landreau, et al.. Influence of the V/III ratio on the growth of group III nitride quantum dots deposited on silicon substrate by plasma enhanced chemical vapor deposition. 19th Annual International Conference on Composites or Nano-Engeneering (ICCE-19), Jul 2011, Shanghaï, China. pp.143. ⟨hal-00944752⟩
28 Consultations
0 Téléchargements

Partager

Gmail Facebook Twitter LinkedIn More