3C-SiC heteroepitaxy on hexagonal SiC substrates

Abstract : Abstract Results of an epitaxial growth of 3C-SiC epilayers on Si (0001) and C(000¯1) faces of hexagonal 6H-SiC substrates are described. TEM study of grown layers as well as interface between cubic and hexagonal polytypes is presented. Difference between the layers on the Si and C faces are discussed.
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https://hal-unilim.archives-ouvertes.fr/hal-00945824
Contributeur : Pamela Bathias <>
Soumis le : jeudi 13 février 2014 - 09:49:31
Dernière modification le : jeudi 4 juillet 2019 - 16:38:03

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A. Henry, X. Li, H. Jacobson, S. Andersson, Alexandre Boulle, et al.. 3C-SiC heteroepitaxy on hexagonal SiC substrates. Materials Science Forum, Trans Tech Publications Inc., 2013, Volumes 740 - 742 (Chapter 4: Epitaxial Growth 3C SiC), pp.267-270. ⟨10.4028/www.scientific.net/MSF.740-742.267⟩. ⟨hal-00945824⟩

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