Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material

Aurelian Crunteanu; Amine Mennai; Cyril Guines; Damien Passerieux; Pierre Blondy

Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material

Aurelian Crunteanu ^{1, *} Amine Mennai ¹ Cyril Guines ¹ Damien Passerieux ¹ Pierre Blondy ¹

* Auteur correspondant

XLIM - XLIM

Abstract : We present the fabrication and characterization of novel RF switches based on Ge2Sb2Te5 (GST) phase change material. Such ohmic devices show non-volatile switching with resistivity changes up to 105 as the material is transforming between the amorphous and the crystalline state by either applying a voltage pulse or direct heating. We investigated the RF properties and power handling of such devices in two configurations: out-of-plane (GST material between two electrodes) and inline switches. For a directly heated 10-mu length inline switch we measured an on-state resistance of 7 Ohm, and an off-state capacitance and resistance of 13.7 fF and 6.47 MOhm, respectively, resulting in a cut-off frequency of ~1.6 THz.

Keywords : Ge2Sb2Te5 high linearity phase-change materials RF switches

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electromagnétisme

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Sciences de l'ingénieur [physics] / Matériaux

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-00956911
Contributeur : Aurelian Crunteanu <>
Soumis le : vendredi 7 mars 2014 - 15:41:45
Dernière modification le : mardi 12 novembre 2019 - 14:06:03

Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material

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Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material

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