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Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material

Aurelian Crunteanu 1, * Amine Mennai 1 Cyril Guines 1 Damien Passerieux 1 Pierre Blondy 1 
* Auteur correspondant
Abstract : We present the fabrication and characterization of novel RF switches based on Ge2Sb2Te5 (GST) phase change material. Such ohmic devices show non-volatile switching with resistivity changes up to 105 as the material is transforming between the amorphous and the crystalline state by either applying a voltage pulse or direct heating. We investigated the RF properties and power handling of such devices in two configurations: out-of-plane (GST material between two electrodes) and inline switches. For a directly heated 10-mu length inline switch we measured an on-state resistance of 7 Ohm, and an off-state capacitance and resistance of 13.7 fF and 6.47 MOhm, respectively, resulting in a cut-off frequency of ~1.6 THz.
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Soumis le : vendredi 7 mars 2014 - 15:41:45
Dernière modification le : mercredi 22 décembre 2021 - 11:58:04


  • HAL Id : hal-00956911, version 1



Aurelian Crunteanu, Amine Mennai, Cyril Guines, Damien Passerieux, Pierre Blondy. Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material. International Microwave Symposium 2014, IEEE-MTT, Mar 2014, Tampa Bay, FL, United States. paper TU4A-2. ⟨hal-00956911⟩



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