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Communication Dans Un Congrès Année : 2014

A 2-Pole RF-MEMS Tunable Bandpass Filter For High-Power Applications

Ghassen Chaabane
  • Fonction : Auteur
  • PersonId : 958169
Arnaud Pothier
Matthieu Chatras
Cyril Guines
  • Fonction : Auteur
  • PersonId : 919493
Valérie Madrangeas
Pierre Blondy
  • Fonction : Auteur
  • PersonId : 915831

Résumé

This paper presents a novel type of tunable bandpass filters with constant bandwidth and wide tuning range. A constant absolute pass-band has been obtained by integrating a low-pass filter at the input and the output of the filter. The filter fabricated on duroid substrate can be tuned from 690MHz up to 1130MHz, by using RF-MEMS switches mounted in series with fixed capacitors. Matching is better than -12dB and the 3dB passband is 65MHz+/-5MHz. Measured insertion loss is less than 1.7dB at the upper end of the band and 3.3dB at the lower end. The filter shows no compression up to 1Watt of input power, and no measurable degradation of ACPR at the same power level.
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Dates et versions

hal-01020184 , version 1 (07-07-2014)

Identifiants

  • HAL Id : hal-01020184 , version 1

Citer

Ghassen Chaabane, Arnaud Pothier, Matthieu Chatras, Cyril Guines, Valérie Madrangeas, et al.. A 2-Pole RF-MEMS Tunable Bandpass Filter For High-Power Applications. European Microwave Conference, Oct 2014, Rome, Italy. pp.#2089. ⟨hal-01020184⟩

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