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Communication Dans Un Congrès Année : 1993

A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors

Résumé

A pulsed I(V) and S-parameters setup for the RF modeling of semi-conductor devices is described. The management of the whole setup as well as the database is made by an object-oriented software, which provides a large amount of modularity and reusability of the different tools developed. Measurements capability on power devices is demonstrated as well as the S-parameters measurements capabilities in critical regions of FET devices. I(V) and RF measures are presented. These measurements provide a nonlinear small-signal equivalent circuit function of the command voltages.

Domaines

Electronique
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Dates et versions

hal-01067054 , version 1 (22-09-2014)

Identifiants

Citer

Jean-Pierre Teyssier, Michel Campovecchio, Raphaël Sommet, Portilla Joaquin, Raymond Quéré. A pulsed S-parameters measurement setup for the nonlinear characterization of FETs and bipolar power transistors. 23rd European Microwave Conference, Sep 1993, Madrid, Spain. pp. 489-493, ⟨10.1109/EUMA.1993.336603⟩. ⟨hal-01067054⟩

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