Modelling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology

Sandra Demeyer (1) , Audrey Philippon (1) , Michel Campovecchio (1) , Christophe Charbonniaud (1) , Stéphane Piotrowicz (2) , Didier Floriot (3) , Raymond Quéré (1)

1 IRCOM - Institut de Recherche en Communications Optiques et Microondes
2 III-V Lab - Alcatel-Thalès III-V lab
3 UMS

Domaines: Sciences de l'ingénieur [physics]; Electronique

Sandra Demeyer, Audrey Philippon, Michel Campovecchio, Christophe Charbonniaud, Stéphane Piotrowicz, et al.. Modelling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology. 35th European Microwave Conference, Oct 2005, Paris, France. pp. 1603-1606, ⟨10.1109/EUMC.2005.1610261⟩. ⟨hal-01070012⟩