Trap Characterization of Microwave GaN HEMTs Based on Frequency Dispersion of the Output-Admittance

Clément Potier; Audrey Martin; Michel Campovecchio; Sylvain Laurent; Raymond Quéré; Jean-Claude Jacquet; Olivier Jardel; Stéphane Piotrowicz; Sylvain Delage

doi:10.1109/EuMC.2014.6986709

Trap Characterization of Microwave GaN HEMTs Based on Frequency Dispersion of the Output-Admittance

Clément Potier ¹ Audrey Martin ¹ Michel Campovecchio ^{1, *} Sylvain Laurent ¹ Raymond Quéré ¹ Jean-Claude Jacquet ² Olivier Jardel ² Stéphane Piotrowicz ² Sylvain Delage ²

* Auteur correspondant

1 XLIM-C2S2 - C2S2

XLIM - XLIM

2 III-V Lab - Alcatel-Thales III-V Lab

Abstract : This paper presents a characterization method of traps, based on the frequency dispersion of the output-admittance characterized by low-frequency S-parameter measurements. As RF performances of GaN HEMTs are strongly degraded by trapping effects, trap characterizations are essential for this power technology. The proposed measurement setup and extraction method allow us to derive the activation energy Ea and the capture cross section σn of the identified traps. A 0.25µm gate length InAlN/GaN HEMT was characterized. A trap was identified with an activation energy of 0.38eV, a capture cross-section of 1.73 10-16cm-2, and a field dependency of the emission rate. These results give an efficient feedback to the technology developments.

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01136467
Contributeur : Michel Campovecchio <>
Soumis le : vendredi 27 mars 2015 - 12:35:57
Dernière modification le : dimanche 1 décembre 2019 - 16:54:01

Trap Characterization of Microwave GaN HEMTs Based on Frequency Dispersion of the Output-Admittance

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Trap Characterization of Microwave GaN HEMTs Based on Frequency Dispersion of the Output-Admittance

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