Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances

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Communication dans un congrès
38th European Solid State Device Research Conference (ESSDERC’2008), Sep 2008, Edinburg, United Kingdom. 2008, Proceedings of the 38th European Solid State Device Research Conference (ESSDERC’2008)
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Contributeur : Sylvain Vedraine <>
Soumis le : jeudi 17 décembre 2015 - 10:26:38
Dernière modification le : samedi 14 avril 2018 - 01:21:08

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  • HAL Id : hal-01245391, version 1

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Sébastien Martinie, Sylvain Vedraine, Daniela Munteanu, Gilles Le Carval, Vincent Barral, et al.. Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances. 38th European Solid State Device Research Conference (ESSDERC’2008), Sep 2008, Edinburg, United Kingdom. 2008, Proceedings of the 38th European Solid State Device Research Conference (ESSDERC’2008). 〈hal-01245391〉

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