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Communication Dans Un Congrès Année : 2008

Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances

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hal-01245391 , version 1 (17-12-2015)

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  • HAL Id : hal-01245391 , version 1

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Sébastien Martinie, Sylvain Vedraine, Daniela Munteanu, Gilles Le Carval, Vincent Barral, et al.. Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances. 38th European Solid State Device Research Conference (ESSDERC’2008), Sep 2008, Edinburg, United Kingdom. ⟨hal-01245391⟩
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