Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances

Sébastien Martinie (1, 2) , Sylvain Vedraine (1) , Daniela Munteanu (1) , Gilles Le Carval (2) , Vincent Barral (1, 2) , Jean-Luc Autran (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Domaines: Optique / photonique

Sébastien Martinie, Sylvain Vedraine, Daniela Munteanu, Gilles Le Carval, Vincent Barral, et al.. Numerical simulation of quasi-ballistic transport in fully-depleted SOI and double-gate MOSFETs: application to the analysis of circuit performances. 38th European Solid State Device Research Conference (ESSDERC’2008), Sep 2008, Edinburg, United Kingdom. ⟨hal-01245391⟩