Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements

Abstract : This paper presents a detailed trap investigation based on combined pulsed I/V measurements, Drain Current Transient (DCT) measurements and Low Frequency output-admittance (LF Y22) dispersion measurements. DCT characterization is carried out over a 7-decade time scale. LF Y22 measurements are carried out over the frequency range from 10 Hz to 10 MHz. These combined measurements were performed for AlGaN/GaN HEMTs under class AB operation and allowed the extraction of the activation energy Ea and the capture cross section σa of the identified traps. Low-frequency small-signal, (LF Y22) and large-signal voltage steps (DCT) results for trap characterization were found to be correlated. They allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.
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Communication dans un congrès
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European , Sep 2015, PARIS, France. pp.136-139, 2015, Microwave Integrated Circuits Conference (EuMIC), 2015 10th European 〈10.1109/EuMIC.2015.7345087〉
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https://hal-unilim.archives-ouvertes.fr/hal-01286563
Contributeur : Denis Barataud <>
Soumis le : vendredi 11 mars 2016 - 09:55:03
Dernière modification le : lundi 22 janvier 2018 - 10:50:03

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Agostino Benvegnu, D Bisi, Sylvain Laurent, M Meneghini, G Meneghesso, et al.. Trap investigation under class AB operation in AlGaN/GaN HEMTs based on output-admittance frequency dispersion, pulsed and transient measurements. Microwave Integrated Circuits Conference (EuMIC), 2015 10th European , Sep 2015, PARIS, France. pp.136-139, 2015, Microwave Integrated Circuits Conference (EuMIC), 2015 10th European 〈10.1109/EuMIC.2015.7345087〉. 〈hal-01286563〉

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