Experimental time-domain evaluation and simulation of high power GaN HEMTS for RF Doherty Amplifier design

Lotfi Ayari; Guillaume Neveux; Denis Barataud; Mohammed Ayad; Estelle Byk; Christophe Chang; Marc Camiade

Experimental time-domain evaluation and simulation of high power GaN HEMTS for RF Doherty Amplifier design

Lotfi Ayari ¹ Guillaume Neveux ¹ Denis Barataud ¹ Mohammed Ayad ¹ Estelle Byk ¹ Christophe Chang ¹ Marc Camiade

1 XLIM-C2S2 - C2S2

XLIM - XLIM

Abstract : This paper presents an automatized, on-wafer time-domain active load-pull set-up developed for a Doherty-oriented characterization of High Power GaN High-Electron Mobility Transistors (HEMTs). From the on-wafer measured Time-Domain Waveforms (TDW) acquisition, all data required for the design of a Doherty Power Amplifier (DPA) are then directly extracted. With this measurement process, designers have then the direct knowledge of the optimal characteristics of high power transistors along the Output Back-Off (OBO). They also can deduce the maximum obtainable operating bandwidth of the final Doherty PA. Simultaneously to this measurement process, simulations based on the use of non-linear foundry electro-thermal model have also been performed to prove the validity of the method to predict Power Added Efficiency (PAE) performances versus OBO. Measurement and simulations have been applied to an 8×125μm AlGaN/GaN GH25 transistor from UMS foundry.

Keywords : III-V semiconductors gallium compounds high electron mobility transistors radiofrequency power amplifiers wide band gap semiconductors

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01286576
Contributeur : Denis Barataud <>
Soumis le : vendredi 11 mars 2016 - 10:11:32
Dernière modification le : jeudi 11 janvier 2018 - 06:26:32

Experimental time-domain evaluation and simulation of high power GaN HEMTS for RF Doherty Amplifier design

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Experimental time-domain evaluation and simulation of high power GaN HEMTS for RF Doherty Amplifier design

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