Experimental time-domain evaluation and simulation of high power GaN HEMTS for RF Doherty Amplifier design

Abstract : This paper presents an automatized, on-wafer time-domain active load-pull set-up developed for a Doherty-oriented characterization of High Power GaN High-Electron Mobility Transistors (HEMTs). From the on-wafer measured Time-Domain Waveforms (TDW) acquisition, all data required for the design of a Doherty Power Amplifier (DPA) are then directly extracted. With this measurement process, designers have then the direct knowledge of the optimal characteristics of high power transistors along the Output Back-Off (OBO). They also can deduce the maximum obtainable operating bandwidth of the final Doherty PA. Simultaneously to this measurement process, simulations based on the use of non-linear foundry electro-thermal model have also been performed to prove the validity of the method to predict Power Added Efficiency (PAE) performances versus OBO. Measurement and simulations have been applied to an 8×125μm AlGaN/GaN GH25 transistor from UMS foundry.
Type de document :
Communication dans un congrès
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European , Sep 2015, PARIS, France. IEEE, pp.361-364, 2015, 〈10.1109/EuMIC.2015.7345144〉
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https://hal-unilim.archives-ouvertes.fr/hal-01286576
Contributeur : Denis Barataud <>
Soumis le : vendredi 11 mars 2016 - 10:11:32
Dernière modification le : jeudi 11 janvier 2018 - 06:26:32

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Lotfi Ayari, Guillaume Neveux, Denis Barataud, Mohammed Ayad, Estelle Byk, et al.. Experimental time-domain evaluation and simulation of high power GaN HEMTS for RF Doherty Amplifier design . Microwave Integrated Circuits Conference (EuMIC), 2015 10th European , Sep 2015, PARIS, France. IEEE, pp.361-364, 2015, 〈10.1109/EuMIC.2015.7345144〉. 〈hal-01286576〉

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