Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

Agostino Benvegnu; M Meneghini; G. Meneghesso; Jean-Luc Muraro; Denis Barataud; E Zanoni; Raymond Quéré

doi:10.1109/MWSYM.2015.7166984

Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

Agostino Benvegnu M Meneghini ¹ G. Meneghesso ² Jean-Luc Muraro ³ Denis Barataud E Zanoni ¹ Raymond Quéré

1 DEI - Department of Information Engineering [Padova]

2 DEI - Dipartimento di Ingegneria de l'Informazione [Padova]

3 TAS - Thales Alenia Space

Abstract : An advanced microwave characterization technique has been developed to determine the trapping and detrapping time constants due to wide Pulsed-RF large-signal excitation of AlGaN/GaN High-Electron Mobility Transistors (HEMTs). This approach is based on combined Continuous Waveform (CW) Time-Domain Load-Pull measurements and low frequency (LF) drain current transient measurements under one wide non-periodic Pulsed-RF excitation to investigate trapping phenomena. The trap capture and emission time constants are extracted by applying the current-transient method for different RF large-signal input power levels and for varying duration of pulse-width (PW) of the one pulse-RF excitation. The strong influence of the RF load-line excursion in the Drain current collapse after the RF stimulus is also demonstrated.

Keywords : III-V semiconductors aluminium compounds electric current measurement gallium compounds high electron mobility transistors microwave measurement wide band gap semiconductors

Type de document :

Communication dans un congrès

Microwave Symposium (IMS), 2015 IEEE MTT-S International , May 2015, Phoenix, United States. IEEE, pp.1-4, 2015, Microwave Symposium (IMS), 2015 IEEE MTT-S International 〈10.1109/MWSYM.2015.7166984〉

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01286801
Contributeur : Denis Barataud <>
Soumis le : vendredi 11 mars 2016 - 14:10:59
Dernière modification le : jeudi 14 juin 2018 - 10:54:03

Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

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Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

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