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Communication dans un congrès
Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation
Abstract : An advanced microwave characterization technique has been developed to determine the trapping and detrapping time constants due to wide Pulsed-RF large-signal excitation of AlGaN/GaN High-Electron Mobility Transistors (HEMTs). This approach is based on combined Continuous Waveform (CW) Time-Domain Load-Pull measurements and low frequency (LF) drain current transient measurements under one wide non-periodic Pulsed-RF excitation to investigate trapping phenomena. The trap capture and emission time constants are extracted by applying the current-transient method for different RF large-signal input power levels and for varying duration of pulse-width (PW) of the one pulse-RF excitation. The strong influence of the RF load-line excursion in the Drain current collapse after the RF stimulus is also demonstrated.
https://hal-unilim.archives-ouvertes.fr/hal-01286801
Contributeur : Denis Barataud Connectez-vous pour contacter le contributeur
Soumis le : vendredi 11 mars 2016 - 14:10:59
Dernière modification le : mercredi 22 décembre 2021 - 11:58:09
Contributeur : Denis Barataud Connectez-vous pour contacter le contributeur
Soumis le : vendredi 11 mars 2016 - 14:10:59
Dernière modification le : mercredi 22 décembre 2021 - 11:58:09
