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Communication Dans Un Congrès Année : 2015

Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

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Agostino Benvegnu
  • Fonction : Auteur
  • PersonId : 965673
M Meneghini
  • Fonction : Auteur
  • PersonId : 892980
Denis Barataud
E Zanoni
  • Fonction : Auteur
  • PersonId : 892981
Raymond Quéré

Résumé

An advanced microwave characterization technique has been developed to determine the trapping and detrapping time constants due to wide Pulsed-RF large-signal excitation of AlGaN/GaN High-Electron Mobility Transistors (HEMTs). This approach is based on combined Continuous Waveform (CW) Time-Domain Load-Pull measurements and low frequency (LF) drain current transient measurements under one wide non-periodic Pulsed-RF excitation to investigate trapping phenomena. The trap capture and emission time constants are extracted by applying the current-transient method for different RF large-signal input power levels and for varying duration of pulse-width (PW) of the one pulse-RF excitation. The strong influence of the RF load-line excursion in the Drain current collapse after the RF stimulus is also demonstrated.
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Dates et versions

hal-01286801 , version 1 (11-03-2016)

Identifiants

Citer

Agostino Benvegnu, M Meneghini, G. Meneghesso, Jean-Luc Muraro, Denis Barataud, et al.. Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation. Microwave Symposium (IMS), 2015 IEEE MTT-S International, May 2015, Phoenix, United States. pp.1-4, ⟨10.1109/MWSYM.2015.7166984⟩. ⟨hal-01286801⟩
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