Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

Agostino Benvegnu; M Meneghini; G. Meneghesso; Jean-Luc Muraro; Denis Barataud; E Zanoni; Raymond Quéré

doi:10.1109/MWSYM.2015.7166984

Communication dans un congrès

Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

Agostino Benvegnu ¹ M Meneghini ² G. Meneghesso ³ Jean-Luc Muraro ⁴ Denis Barataud ¹ E Zanoni ² Raymond Quéré ¹

1 XLIM-SRF - Systèmes RF

XLIM - XLIM : SRF

2 DEI - Department of Information Engineering [Padova]

3 DEI - Dipartimento di Ingegneria de l'Informazione [Padova]

4 TAS - Thales Alenia Space

Abstract : An advanced microwave characterization technique has been developed to determine the trapping and detrapping time constants due to wide Pulsed-RF large-signal excitation of AlGaN/GaN High-Electron Mobility Transistors (HEMTs). This approach is based on combined Continuous Waveform (CW) Time-Domain Load-Pull measurements and low frequency (LF) drain current transient measurements under one wide non-periodic Pulsed-RF excitation to investigate trapping phenomena. The trap capture and emission time constants are extracted by applying the current-transient method for different RF large-signal input power levels and for varying duration of pulse-width (PW) of the one pulse-RF excitation. The strong influence of the RF load-line excursion in the Drain current collapse after the RF stimulus is also demonstrated.

Keywords : III-V semiconductors aluminium compounds electric current measurement gallium compounds high electron mobility transistors microwave measurement wide band gap semiconductors

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01286801
Contributeur : Denis Barataud <>
Soumis le : vendredi 11 mars 2016 - 14:10:59
Dernière modification le : lundi 14 décembre 2020 - 17:20:23

Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

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Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

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