Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

Abstract : An advanced microwave characterization technique has been developed to determine the trapping and detrapping time constants due to wide Pulsed-RF large-signal excitation of AlGaN/GaN High-Electron Mobility Transistors (HEMTs). This approach is based on combined Continuous Waveform (CW) Time-Domain Load-Pull measurements and low frequency (LF) drain current transient measurements under one wide non-periodic Pulsed-RF excitation to investigate trapping phenomena. The trap capture and emission time constants are extracted by applying the current-transient method for different RF large-signal input power levels and for varying duration of pulse-width (PW) of the one pulse-RF excitation. The strong influence of the RF load-line excursion in the Drain current collapse after the RF stimulus is also demonstrated.
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Communication dans un congrès
Microwave Symposium (IMS), 2015 IEEE MTT-S International , May 2015, Phoenix, United States. IEEE, pp.1-4, 2015, Microwave Symposium (IMS), 2015 IEEE MTT-S International 〈10.1109/MWSYM.2015.7166984〉
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https://hal-unilim.archives-ouvertes.fr/hal-01286801
Contributeur : Denis Barataud <>
Soumis le : vendredi 11 mars 2016 - 14:10:59
Dernière modification le : vendredi 11 mars 2016 - 14:10:59

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Agostino Benvegnu, M Meneghini, G. Meneghesso, Jean-Luc Muraro, Denis Barataud, et al.. Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation. Microwave Symposium (IMS), 2015 IEEE MTT-S International , May 2015, Phoenix, United States. IEEE, pp.1-4, 2015, Microwave Symposium (IMS), 2015 IEEE MTT-S International 〈10.1109/MWSYM.2015.7166984〉. 〈hal-01286801〉

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