Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation

Agostino Benvegnu (1) , M Meneghini (2) , G. Meneghesso (3) , Jean-Luc Muraro (4) , Denis Barataud (1) , E Zanoni (2) , Raymond Quéré (1)

1 XLIM-SRF - Systèmes RF
2 DEI - Department of Information Engineering [Padova]
3 DEI - Dipartimento di Ingegneria de l'Informazione [Padova]
4 TAS - Thales Alenia Space [Toulouse]

An advanced microwave characterization technique has been developed to determine the trapping and detrapping time constants due to wide Pulsed-RF large-signal excitation of AlGaN/GaN High-Electron Mobility Transistors (HEMTs). This approach is based on combined Continuous Waveform (CW) Time-Domain Load-Pull measurements and low frequency (LF) drain current transient measurements under one wide non-periodic Pulsed-RF excitation to investigate trapping phenomena. The trap capture and emission time constants are extracted by applying the current-transient method for different RF large-signal input power levels and for varying duration of pulse-width (PW) of the one pulse-RF excitation. The strong influence of the RF load-line excursion in the Drain current collapse after the RF stimulus is also demonstrated.

Mots clés: III-V semiconductors aluminium compounds electric current measurement gallium compounds high electron mobility transistors microwave measurement wide band gap semiconductors

Domaines: Electronique; Micro et nanotechnologies/Microélectronique

Agostino Benvegnu, M Meneghini, G. Meneghesso, Jean-Luc Muraro, Denis Barataud, et al.. Trap characterization of AlGaN/GaN HEMTs through drain current measurements under pulsed-RF large-signal excitation. Microwave Symposium (IMS), 2015 IEEE MTT-S International, May 2015, Phoenix, United States. pp.1-4, ⟨10.1109/MWSYM.2015.7166984⟩. ⟨hal-01286801⟩