An automatized time-domain set-up for on-wafer charaterization, doherty oriented, of high power GaN HEMTS - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2015

An automatized time-domain set-up for on-wafer charaterization, doherty oriented, of high power GaN HEMTS

(1) , (1) , (2) , , (1) , (1)
1
2
Lotfi Ayari
  • Fonction : Auteur
  • PersonId : 978322
Mohammed Ayad
  • Fonction : Auteur
  • PersonId : 978298
Estelle Byk
  • Fonction : Auteur
  • PersonId : 978299
Marc Camiade
  • Fonction : Auteur
Guillaume Neveux
  • Fonction : Auteur
Denis Barataud

Résumé

This paper presents an automatized on-wafer time-domain active load-pull set-up specifically developed for the characterization of High Power GaN High-Electron Mobility Transistors (HEMTs). This set-up is associated to a specific methodology for the design of Doherty Power Amplifier (DPA). This methodology has been applied to a GaN technology transistor: from the on-wafer measured Time-Domain Waveforms (TDW) acquisition, all data required for the design of a Doherty power amplifier are directly extracted. Designers have the direct knowledge of the optimal characteristics of high power transistors along the output back-off (OBO) at fundamental frequency and also the maximum obtainable operating bandwidth of the final desired Doherty PA.
Fichier non déposé

Dates et versions

hal-01286807 , version 1 (11-03-2016)

Identifiants

Citer

Lotfi Ayari, Mohammed Ayad, Estelle Byk, Marc Camiade, Guillaume Neveux, et al.. An automatized time-domain set-up for on-wafer charaterization, doherty oriented, of high power GaN HEMTS. Microwave Measurement Conference (ARFTG), 2015 85th, May 2015, Phoenix, United States. pp.1-4, ⟨10.1109/ARFTG.2015.7162905⟩. ⟨hal-01286807⟩
77 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook Twitter LinkedIn More