An automatized time-domain set-up for on-wafer charaterization, doherty oriented, of high power GaN HEMTS

Abstract : This paper presents an automatized on-wafer time-domain active load-pull set-up specifically developed for the characterization of High Power GaN High-Electron Mobility Transistors (HEMTs). This set-up is associated to a specific methodology for the design of Doherty Power Amplifier (DPA). This methodology has been applied to a GaN technology transistor: from the on-wafer measured Time-Domain Waveforms (TDW) acquisition, all data required for the design of a Doherty power amplifier are directly extracted. Designers have the direct knowledge of the optimal characteristics of high power transistors along the output back-off (OBO) at fundamental frequency and also the maximum obtainable operating bandwidth of the final desired Doherty PA.
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Microwave Measurement Conference (ARFTG), 2015 85th , May 2015, Phoenix, United States. IEEE, pp.1-4, 2015, Microwave Measurement Conference (ARFTG), 2015 85th 〈10.1109/ARFTG.2015.7162905〉
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Contributeur : Denis Barataud <>
Soumis le : vendredi 11 mars 2016 - 14:17:47
Dernière modification le : jeudi 11 janvier 2018 - 06:26:32

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Lotfi Ayari, Mohammed Ayad, Estelle Byk, Marc Camiade, Guillaume Neveux, et al.. An automatized time-domain set-up for on-wafer charaterization, doherty oriented, of high power GaN HEMTS. Microwave Measurement Conference (ARFTG), 2015 85th , May 2015, Phoenix, United States. IEEE, pp.1-4, 2015, Microwave Measurement Conference (ARFTG), 2015 85th 〈10.1109/ARFTG.2015.7162905〉. 〈hal-01286807〉

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