An automatized time-domain set-up for on-wafer charaterization, doherty oriented, of high power GaN HEMTS

Lotfi Ayari (1) , Mohammed Ayad (1) , Estelle Byk (2) , Marc Camiade , Guillaume Neveux (1) , Denis Barataud (1)

1 XLIM-SRF - Systèmes RF
2 XLIM-C2S2 - C2S2

This paper presents an automatized on-wafer time-domain active load-pull set-up specifically developed for the characterization of High Power GaN High-Electron Mobility Transistors (HEMTs). This set-up is associated to a specific methodology for the design of Doherty Power Amplifier (DPA). This methodology has been applied to a GaN technology transistor: from the on-wafer measured Time-Domain Waveforms (TDW) acquisition, all data required for the design of a Doherty power amplifier are directly extracted. Designers have the direct knowledge of the optimal characteristics of high power transistors along the output back-off (OBO) at fundamental frequency and also the maximum obtainable operating bandwidth of the final desired Doherty PA.

Mots clés: III-V semiconductors gallium compounds high electron mobility transistors power amplifiers wide band gap semiconductors

Domaines: Electronique; Micro et nanotechnologies/Microélectronique

Lotfi Ayari, Mohammed Ayad, Estelle Byk, Marc Camiade, Guillaume Neveux, et al.. An automatized time-domain set-up for on-wafer charaterization, doherty oriented, of high power GaN HEMTS. Microwave Measurement Conference (ARFTG), 2015 85th, May 2015, Phoenix, United States. pp.1-4, ⟨10.1109/ARFTG.2015.7162905⟩. ⟨hal-01286807⟩