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Pulsed gate bias control of GaN HEMTs to improve pulse-to-pulse stability in radar applications
Abstract : A significant improvement is demonstrated in the measured pulse-to-pulse stability of an S-band 6 W GaN high electron mobility transistor (HEMT) power amplifier by generating an appropriate pulse of the gate bias and thus a warm-up drain current just before each radio-frequency (RF) pulse of a periodic and coherent radar burst. The amplitude and the width of this gate bias pulse preceding each periodic RF pulse of the burst are experimentally varied to investigate the trade-off between the improvement of pulse-to-pulse stability and the total power-added efficiency. Finally, this technique of synchronised warm-up gate bias pulse demonstrated a 10 dB improvement of measured amplitude pulse-to-pulse stabilities to meet the critical stability requirement below −55 dB for the RF power amplifier.
Littérature citée [3 références]
https://hal-unilim.archives-ouvertes.fr/hal-01286826
Contributeur : Denis Barataud <>
Soumis le : vendredi 11 mars 2016 - 15:14:19
Dernière modification le : mardi 28 avril 2020 - 09:28:02
Archivage à long terme le : : lundi 13 juin 2016 - 08:51:10
Contributeur : Denis Barataud <>
Soumis le : vendredi 11 mars 2016 - 15:14:19
Dernière modification le : mardi 28 avril 2020 - 09:28:02
Archivage à long terme le : : lundi 13 juin 2016 - 08:51:10
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Pulsed gate bias control of Ga...
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