Pulsed gate bias control of GaN HEMTs to improve pulse-to-pulse stability in radar applications

Julien Delprato; Arnaud Délias; Pierre Medrel; Denis Barataud; Michel Campovecchio; Guillaume Neveux; Audrey Martin; Philippe Bouysse; Jean-Michel Nebus; C Tolant; P Eudeline

doi:10.1049/el.2015.1052

Pulsed gate bias control of GaN HEMTs to improve pulse-to-pulse stability in radar applications

Julien Delprato ¹ Arnaud Délias ¹ Pierre Medrel ¹ Denis Barataud ¹ Michel Campovecchio ¹ Guillaume Neveux ¹ Audrey Martin ¹ Philippe Bouysse ¹ Jean-Michel Nebus ¹ C Tolant ² P Eudeline ²

1 XLIM-C2S2 - C2S2

XLIM - XLIM

2 Thales Air Systems

Abstract : A significant improvement is demonstrated in the measured pulse-to-pulse stability of an S-band 6 W GaN high electron mobility transistor (HEMT) power amplifier by generating an appropriate pulse of the gate bias and thus a warm-up drain current just before each radio-frequency (RF) pulse of a periodic and coherent radar burst. The amplitude and the width of this gate bias pulse preceding each periodic RF pulse of the burst are experimentally varied to investigate the trade-off between the improvement of pulse-to-pulse stability and the total power-added efficiency. Finally, this technique of synchronised warm-up gate bias pulse demonstrated a 10 dB improvement of measured amplitude pulse-to-pulse stabilities to meet the critical stability requirement below −55 dB for the RF power amplifier.

Type de document :

Article dans une revue

Electronics Letters, IET, 2015, 51 (13), pp.1023-1025. 〈10.1049/el.2015.1052〉

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

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Pulsed gate bias control of GaN HEMTs to improve pulse-to-pulse stability in radar applications

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