An active pulsed RF and pulsed DC load-pull system for the characterization of H.B.T. power transistors used in coherent radar and communication systems

Caroline Arnaud; Denis Barataud; Jean-Michel Nebus; Jean-Pierre Teyssier; Jean-Pierre Villotte; Didier Floriot

An active pulsed RF and pulsed DC load-pull system for the characterization of H.B.T. power transistors used in coherent radar and communication systems

Caroline Arnaud ¹ Denis Barataud ¹ Jean-Michel Nebus ¹ Jean-Pierre Teyssier ¹ Jean-Pierre Villotte ¹ Didier Floriot ²

1 IRCOM - Institut de Recherche en Communications Optiques et Microondes

2 THOMSON-CSF LCR - Thomson-CSF Laboratoire Central de Recherches

Abstract : This paper presents a new automated and vector error-corrected active load-pull system allowing the characterization of microwave power transistors under coherent pulsed RF and pulsed DC operating conditions. In this paper, the use of this system is focused on the characterization of a 240-μm2 GaInP-GaAs heterojunction bipolar transistor (HBT) (Thomson CSP-LCR, Orsay, France). On one hand, source and load-pull measurements of such a transistor are reported for different pulsewidths. On the other hand, nonlinear simulations based on an electrothermal model of an HBT have been performed and are compared with experiments. Power variations and RF carrier phase shift within the pulse versus input power and junction temperature of the transistor are shown

Type de document :

Article dans une revue

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

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https://hal-unilim.archives-ouvertes.fr/hal-01287615
Contributeur : Denis Barataud <>
Soumis le : dimanche 13 mars 2016 - 23:43:22
Dernière modification le : jeudi 11 janvier 2018 - 06:17:28

An active pulsed RF and pulsed DC load-pull system for the characterization of H.B.T. power transistors used in coherent radar and communication systems

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An active pulsed RF and pulsed DC load-pull system for the characterization of H.B.T. power transistors used in coherent radar and communication systems

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