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Article dans une revue
Hot small-signal S-parameter measurements of power transistors operating under large-signal condition in a load-pull environment for the study of nonlinear parametric interactions
Abstract : This paper presents a setup that enables wide-band (in-band and out-of-band) measurements of hot small-signal S-parameters of nonlinear devices driven by a large-signal single tone (namely, the pump signal). A load-pull characterization is performed at the pump frequency (F0), while hot small-signal S-parameters are measured with a perturbating signal at a frequency (f) by the use of a probe tone. Basically, the frequency of the probe tone is swept over a wide bandwidth (at the present time from 300 MHz up to F0/2). A higher frequency range, from near dc to KF0, will be implemented in a similar manner. The measurement setup reported here is applied to on-wafer measurements of S-band HBTs. Hot small-signal S-parameter measurements versus large-signal load impedance and pump level will be shown. An application to the prediction of parametric oscillations will be demonstrated. A parametric oscillation predicted at 373 MHz is confirmed by spectrum measurements.
https://hal-unilim.archives-ouvertes.fr/hal-01287616
Contributeur : Denis Barataud Connectez-vous pour contacter le contributeur
Soumis le : dimanche 13 mars 2016 - 23:46:53
Dernière modification le : mercredi 20 octobre 2021 - 01:31:04
Contributeur : Denis Barataud Connectez-vous pour contacter le contributeur
Soumis le : dimanche 13 mars 2016 - 23:46:53
Dernière modification le : mercredi 20 octobre 2021 - 01:31:04
