Hot small-signal S-parameter measurements of power transistors operating under large-signal condition in a load-pull environment for the study of nonlinear parametric interactions

T. Gasseling 1 Denis Barataud 1 Sébastien Mons 1 Jean-Michel Nebus 1 Jean-Pierre Villotte 1 Juan Obregon 1 Raymond Quéré 1
1 IRCOM - Institut de Recherche en Communications Optiques et Microondes
Abstract : This paper presents a setup that enables wide-band (in-band and out-of-band) measurements of hot small-signal S-parameters of nonlinear devices driven by a large-signal single tone (namely, the pump signal). A load-pull characterization is performed at the pump frequency (F0), while hot small-signal S-parameters are measured with a perturbating signal at a frequency (f) by the use of a probe tone. Basically, the frequency of the probe tone is swept over a wide bandwidth (at the present time from 300 MHz up to F0/2). A higher frequency range, from near dc to KF0, will be implemented in a similar manner. The measurement setup reported here is applied to on-wafer measurements of S-band HBTs. Hot small-signal S-parameter measurements versus large-signal load impedance and pump level will be shown. An application to the prediction of parametric oscillations will be demonstrated. A parametric oscillation predicted at 373 MHz is confirmed by spectrum measurements.
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Article dans une revue
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2004, 52 (3), pp.805-812. 〈10.1109/TMTT.2004.823528〉
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https://hal-unilim.archives-ouvertes.fr/hal-01287616
Contributeur : Denis Barataud <>
Soumis le : dimanche 13 mars 2016 - 23:46:53
Dernière modification le : jeudi 11 janvier 2018 - 06:17:28

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T. Gasseling, Denis Barataud, Sébastien Mons, Jean-Michel Nebus, Jean-Pierre Villotte, et al.. Hot small-signal S-parameter measurements of power transistors operating under large-signal condition in a load-pull environment for the study of nonlinear parametric interactions. IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2004, 52 (3), pp.805-812. 〈10.1109/TMTT.2004.823528〉. 〈hal-01287616〉

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