Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

N. K. Subramani (1) , A. K. Sahoo (1) , Jean-Christophe Nallatamby (1) , R. Sommet (1) , N. Rolland (2) , F Medjdoub (2) , R. Quere (1)

1 XLIM-SRF - Systèmes RF
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

no abstract

Mots clés: III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; technology CAD (electronics); 2D physics-based numerical simulation; AlN-GaN-AlGaN; DC measurement; HEMT; SiC; TCAD-based device simulation; channel sheet resistance; chuck temperature; gate-source bias; high-electron mobility transistors; low-frequency S-parameter measurement; on-wafer measurement; parasitic resistance characterization; silicon carbide substrate; source-drain lengths; temperature-dependent on-resistance; temperature-dependent series contact resistance; two-dimensional physics-based numerical simulation; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Semiconductor device measurement; Temperature measurement; Wide band gap semiconductors; Gallium-nitride (GaN); high electron-mobility transistor (HEMT); numerical simulation; on-resistance; sheet resistance; sheet resistance.

Domaines: Micro et nanotechnologies/Microélectronique

N. K. Subramani, A. K. Sahoo, Jean-Christophe Nallatamby, R. Sommet, N. Rolland, et al.. Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements. IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (5), pp.1351-1358. ⟨10.1109/TMTT.2016.2549528⟩. ⟨hal-01394908⟩