Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation
Résumé
no abstract
Mots clés
Y parameters
AlGaN HEMT
Silicon Carbide
AC simulation
Performance evaluation
Numerical models
Mathematical model
MODFETs
HEMTs
Gallium nitride
Energy states
traps specifications
channel traps
TCAD simulation
SiC
LF admittance dispersion measurement
HEMT
AlN-GaN-AlGaN
wide band gap semiconductors
technology CAD (electronics)
silicon compounds
semiconductor growth
high electron mobility transistors
gallium compounds
aluminium compounds
III-V semiconductors
trapping effects