Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation

Keywords : Y parameters AlGaN HEMT Silicon Carbide AC simulation Performance evaluation Numerical models Mathematical model MODFETs HEMTs Gallium nitride Energy states traps specifications channel traps TCAD simulation SiC LF admittance dispersion measurement HEMT AlN-GaN-AlGaN wide band gap semiconductors technology CAD (electronics) silicon compounds semiconductor growth high electron mobility transistors gallium compounds aluminium compounds III-V semiconductors trapping effects