Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation

N. K. Subramani; A. K. Sahoo; Jean-Christophe Nallatamby; R. Sommet; R. Quere

doi:10.1109/PRIME.2016.7519485

Communication dans un congrès

Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation

N. K. Subramani ¹ A. K. Sahoo ¹ Jean-Christophe Nallatamby ¹ R. Sommet ¹ R. Quere ¹

1 XLIM-SRF - Systèmes RF

XLIM - XLIM : SRF

Abstract : no abstract

Keywords : trapping effects III-V semiconductors aluminium compounds gallium compounds semiconductor growth high electron mobility transistors silicon compounds technology CAD (electronics) wide band gap semiconductors AlN-GaN-AlGaN HEMT SiC LF admittance dispersion measurement TCAD simulation channel traps traps specifications Energy states Gallium nitride HEMTs Numerical models Mathematical model MODFETs Performance evaluation AC simulation Silicon Carbide AlGaN HEMT Y parameters

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

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https://hal-unilim.archives-ouvertes.fr/hal-01394909
Contributeur : Raphael Sommet <>
Soumis le : jeudi 10 novembre 2016 - 10:27:06
Dernière modification le : samedi 2 mai 2020 - 16:58:02

Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation

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Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation

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