Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation

N. K. Subramani 1 A. K. Sahoo 1 Jean-Christophe Nallatamby 1 R. Sommet 1 R. Quere 1
1 XLIM-SRF - Systèmes RF
XLIM - XLIM : SRF
Abstract : no abstract
Keywords : trapping effects III-V semiconductors aluminium compounds gallium compounds semiconductor growth high electron mobility transistors silicon compounds technology CAD (electronics) wide band gap semiconductors AlN-GaN-AlGaN HEMT SiC LF admittance dispersion measurement TCAD simulation channel traps traps specifications Energy states Gallium nitride HEMTs Numerical models Mathematical model MODFETs Performance evaluation AC simulation Silicon Carbide AlGaN HEMT Y parameters
Type de document :
Communication dans un congrès
2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2016, Lisbon, Portugal. pp.1-4, 2016, 〈10.1109/PRIME.2016.7519485〉
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https://hal-unilim.archives-ouvertes.fr/hal-01394909
Contributeur : Raphael Sommet <>
Soumis le : jeudi 10 novembre 2016 - 10:27:06
Dernière modification le : jeudi 11 janvier 2018 - 06:27:36

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N. K. Subramani, A. K. Sahoo, Jean-Christophe Nallatamby, R. Sommet, R. Quere. Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation. 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2016, Lisbon, Portugal. pp.1-4, 2016, 〈10.1109/PRIME.2016.7519485〉. 〈hal-01394909〉

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