Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation

N. K. Subramani (1) , A. K. Sahoo (1) , Jean-Christophe Nallatamby (1) , R. Sommet (1) , R. Quere (1)

1 XLIM-SRF - Systèmes RF

no abstract

Mots clés: Y parameters; AlGaN HEMT; Silicon Carbide; AC simulation; Performance evaluation; Numerical models; Mathematical model; MODFETs; HEMTs; Gallium nitride; Energy states; traps specifications; channel traps; TCAD simulation; SiC; LF admittance dispersion measurement; HEMT; AlN-GaN-AlGaN; wide band gap semiconductors; technology CAD (electronics); silicon compounds; semiconductor growth; high electron mobility transistors; gallium compounds; aluminium compounds; III-V semiconductors; trapping effects

Domaines: Micro et nanotechnologies/Microélectronique

N. K. Subramani, A. K. Sahoo, Jean-Christophe Nallatamby, R. Sommet, R. Quere. Systematic study of traps in AlN/GaN/AlGaN HEMTs on SiC substrate by numerical TCAD simulation. 2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Jun 2016, Lisbon, Portugal. pp.1-4, ⟨10.1109/PRIME.2016.7519485⟩. ⟨hal-01394909⟩