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Communication Dans Un Congrès Année : 2016

Thermal Analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC Substrate through TCAD Simulations and Measurements

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hal-01395028 , version 1 (10-11-2016)

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  • HAL Id : hal-01395028 , version 1

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A.K. Sahoo, N.K. Subramani, Jean-Christophe Nallatamby, Raphaël Sommet, R Quéré, et al.. Thermal Analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC Substrate through TCAD Simulations and Measurements. Proceedings of the 46st European Microwave Conference, EuMW 2016, 2016, London, UK, United Kingdom. pp. ⟨hal-01395028⟩
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