Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects

Denis Barataud; Agostino Benvegnu; Olivier Jardel; Sylvain Laurent; Matteo Meneghini; Enrico Zanoni; Raymond Quéré

Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects

Denis Barataud ¹ Agostino Benvegnu ¹ Olivier Jardel ² Sylvain Laurent ¹ Matteo Meneghini ³ Enrico Zanoni ³ Raymond Quéré ¹

1 XLIM-SRF - Systèmes RF

XLIM - XLIM : SRF

2 TAS - Thales Alenia Space

3 DEI - Department of Information Engineering [Padova]

Abstract : This paper presents a non-linear electro-thermal AlGaN/GaN model for CAD application with a new additive thermal-trap model to take into account the dynamic behavior of trap states and their associated temperature variation. The thermal-trap model is extracted through low-frequency small-signal CW S-parameter measurements and large-signal pulsed-RF measurements at different temperatures. This thermal-trap model allows accurately predicting the physical temperature activation of traps and also the thermal signature of traps. It is also demonstrated that extrapolation of trap model parameters by stretched multi-exponential function of drain current transient measurements during pulsed-RF excitations allows deeply improving the envelope simulations.

Keywords : wide band gap semiconductors aluminium compounds extrapolation gallium compounds high electron mobility transistors III-V semiconductors semiconductor device models S-parameters

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01706872
Contributeur : Denis Barataud <>
Soumis le : lundi 12 février 2018 - 12:39:04
Dernière modification le : jeudi 14 juin 2018 - 10:54:03

Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects

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Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects

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