Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects

Denis Barataud (1) , Agostino Benvegnu (1) , Olivier Jardel (2) , Sylvain Laurent (1) , Matteo Meneghini (3) , Enrico Zanoni (3) , Raymond Quéré (1)

1 XLIM-SRF - Systèmes RF
2 TAS - Thales Alenia Space [Toulouse]
3 DEI - Department of Information Engineering [Padova]

This paper presents a non-linear electro-thermal AlGaN/GaN model for CAD application with a new additive thermal-trap model to take into account the dynamic behavior of trap states and their associated temperature variation. The thermal-trap model is extracted through low-frequency small-signal CW S-parameter measurements and large-signal pulsed-RF measurements at different temperatures. This thermal-trap model allows accurately predicting the physical temperature activation of traps and also the thermal signature of traps. It is also demonstrated that extrapolation of trap model parameters by stretched multi-exponential function of drain current transient measurements during pulsed-RF excitations allows deeply improving the envelope simulations.

Mots clés: semiconductor device models; S-parameters; wide band gap semiconductors; aluminium compounds; extrapolation; gallium compounds; high electron mobility transistors; III-V semiconductors

Domaines: Sciences de l'ingénieur [physics]; Electronique; Sciences de l'ingénieur [physics]; Micro et nanotechnologies/Microélectronique

Denis Barataud, Agostino Benvegnu, Olivier Jardel, Sylvain Laurent, Matteo Meneghini, et al.. Non-linear electro-thermal AlGaN/GaN model including large-signal dynamic thermal-trapping effects. 2016 IEEE/MTT-S International Microwave Symposium (IMS), May 2016, San Francisco, France. ⟨10.1109/MWSYM.2016.7540040⟩. ⟨hal-01706872⟩