Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

Denis Barataud; Agostino Benvegnu; Davide Bisi; Sylvain Laurent; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Raymond Quéré

doi:10.1017/S1759078716000398

Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

Denis Barataud ¹ Agostino Benvegnu ² Davide Bisi ³ Sylvain Laurent ¹ Matteo Meneghini ³ Gaudenzio Meneghesso ³ Enrico Zanoni ³ Raymond Quéré ¹

1 XLIM-SRF - Systèmes RF

XLIM - XLIM : SRF

2 XLIM - XLIM

3 DEI - Department of Information Engineering [Padova]

Abstract : This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y21) and output conductance (LF Y22). DCT characterization is carried out over a 7-decade time scale. LF Y21 and Y22 measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (Ea) and the capture cross section (σc) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y21 and Y22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

Type de document :

Article dans une revue

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01706876
Contributeur : Denis Barataud <>
Soumis le : lundi 12 février 2018 - 12:42:30
Dernière modification le : jeudi 16 janvier 2020 - 11:40:12

Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

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Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

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