On-wafer time-domain characterization of power GaN HEMTs for accurate nonlinear modeling of thermal and trapping effects and their impacts on pulse to pulse reliability

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https://hal-unilim.archives-ouvertes.fr/hal-01741097
Contributeur : Michel Campovecchio <>
Soumis le : jeudi 22 mars 2018 - 16:31:41
Dernière modification le : vendredi 23 mars 2018 - 10:45:52

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  • HAL Id : hal-01741097, version 1

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Seifeddine Fakhfakh, Marwen Ben Sassi, Audrey Martin, Guillaume Neveux, Denis Barataud, et al.. On-wafer time-domain characterization of power GaN HEMTs for accurate nonlinear modeling of thermal and trapping effects and their impacts on pulse to pulse reliability. Workshop on "Reliability of microwave components and electronic systems", Microwave & RF 2018, Mar 2018, PARIS, France. ⟨hal-01741097⟩

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