On-wafer time-domain measurement of pulse-to-pulse stability and multi-tones load-pull characterization of linearity to improve the nonlinear modeling of thermal/trapping effects in power GaN HEMTs for radar and telecom applications - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année :

On-wafer time-domain measurement of pulse-to-pulse stability and multi-tones load-pull characterization of linearity to improve the nonlinear modeling of thermal/trapping effects in power GaN HEMTs for radar and telecom applications

(1) , (1) , (1) , (1) , (1) , (1) , (1) , (1) , (1) , (1)
1
Denis Barataud
Michel Campovecchio
Audrey Martin
Pierre Medrel
Neveux Guillaume
  • Fonction : Auteur
Michel Prigent
Raymond Quéré
Sylvain Laurent
  • Fonction : Auteur
  • PersonId : 918010
Jean-Pierre Teyssier
  • Fonction : Auteur
  • PersonId : 914307
Fichier non déposé

Dates et versions

hal-02013184 , version 1 (10-02-2019)

Identifiants

  • HAL Id : hal-02013184 , version 1

Citer

Denis Barataud, Michel Campovecchio, Audrey Martin, Pierre Medrel, Neveux Guillaume, et al.. On-wafer time-domain measurement of pulse-to-pulse stability and multi-tones load-pull characterization of linearity to improve the nonlinear modeling of thermal/trapping effects in power GaN HEMTs for radar and telecom applications. EuMW 2018, Sep 2018, MAdrid, Spain. ⟨hal-02013184⟩
32 Consultations
0 Téléchargements

Partager

Gmail Facebook Twitter LinkedIn More