On-wafer time-domain measurement of pulse-to-pulse stability and multi-tones load-pull characterization of linearity to improve the nonlinear modeling of thermal/trapping effects in power GaN HEMTs for radar and telecom applications

Denis Barataud; Michel Campovecchio; Audrey Martin; Pierre Medrel; Neveux Guillaume; Michel Prigent; Jean-Christophe Nallatamby; Raymond Quéré; Sylvain Laurent; Jean-Pierre Teyssier

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On-wafer time-domain measurement of pulse-to-pulse stability and multi-tones load-pull characterization of linearity to improve the nonlinear modeling of thermal/trapping effects in power GaN HEMTs for radar and telecom applications

Denis Barataud ¹ Michel Campovecchio ¹ Audrey Martin ¹ Pierre Medrel ¹ Neveux Guillaume ¹ Michel Prigent ¹ Jean-Christophe Nallatamby ¹ Raymond Quéré ¹ Sylvain Laurent ¹ Jean-Pierre Teyssier ¹

1 XLIM-SRF - Systèmes RF

XLIM - XLIM : SRF

Domaine :

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Sciences de l'ingénieur [physics] / Electronique

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https://hal-unilim.archives-ouvertes.fr/hal-02013184
Contributeur : Denis Barataud <>
Soumis le : dimanche 10 février 2019 - 15:49:14
Dernière modification le : samedi 2 mai 2020 - 16:58:02

On-wafer time-domain measurement of pulse-to-pulse stability and multi-tones load-pull characterization of linearity to improve the nonlinear modeling of thermal/trapping effects in power GaN HEMTs for radar and telecom applications

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On-wafer time-domain measurement of pulse-to-pulse stability and multi-tones load-pull characterization of linearity to improve the nonlinear modeling of thermal/trapping effects in power GaN HEMTs for radar and telecom applications

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