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Piezoelectric characteristic of nanocrystalline AIN films obtained by pulsed laser deposition at room temperature

Abstract : Aluminum nitride AlN thin films were deposited at room temperature by pulsed laser deposition, and their nanostructure and piezoelectric properties were investigated as a function of fluence. For all fluences, the films were found to consist of an amorphous AlN matrix containing crystalline AlN nanoparticles with size of 6-7 nm. These nanoparticles spark off the good piezoelectric response, with d33 piezoelectric coefficients between 2.3 and 3.8 pm V−1, similar to those obtained for 002 -oriented AlN films deposited at higher temperatures. These results indicate that nanocrystalline AlN films deposited at room temperature are good candidates for integration in acoustic wave applications.
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https://hal.archives-ouvertes.fr/hal-00584939
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Soumis le : lundi 11 avril 2011 - 13:36:07
Dernière modification le : samedi 26 mars 2022 - 04:28:26

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C. Cibert, Perrine Dutheil, Corinne Champeaux, Olivier Masson, Gilles Trolliard, et al.. Piezoelectric characteristic of nanocrystalline AIN films obtained by pulsed laser deposition at room temperature. Applied Physics Letters, American Institute of Physics, 2010, 97 (25), pp.251906-1-251906-3. ⟨10.1063/1.3527924⟩. ⟨hal-00584939⟩

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