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Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Abstract : This paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50V environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package.
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https://hal-unilim.archives-ouvertes.fr/hal-00911156
Contributeur : Michel Campovecchio <>
Soumis le : jeudi 28 novembre 2013 - 18:36:15
Dernière modification le : mardi 28 avril 2020 - 09:28:02

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Jérôme Chéron, Michel Campovecchio, Denis Barataud, Tibault Reveyrand, Michel Stanislawiak, et al.. Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies. International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2013, 5 (4), pp.437-445. ⟨10.1017/S1759078713000032⟩. ⟨hal-00911156⟩

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