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Communication Dans Un Congrès Année : 2013

High-Efficiency Power Amplifier MMICs in 100 nm GaN Technology at Ka-band frequencies

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Jérôme Chéron
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Michel Campovecchio
Raymond Quéré

Résumé

Three power amplifier MMICs at Ka-band frequencies are reported in this paper. The MMICs are realized using AlGaN/GaN HEMTs with a gate length of 100 nm. Two single-stage amplifiers are presented to highlight the potential of this GaN technology. A dual-stage amplifier is designed to reach high power performances. In continuous-wave (CW) operation, MMICs have provided up to 1.4 W, 2.4 W and 4.7 W of output power associated with (in this order) 41%, 33%, and 28% of PAE, respectively. The dual-stage MMIC delivered an output power higher than 4 W, associated with 27% of PAE and 9.8 dB of power gain from 29 GHz to 31 GHz.
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Dates et versions

hal-00911618 , version 1 (29-11-2013)

Identifiants

  • HAL Id : hal-00911618 , version 1

Citer

Jérôme Chéron, Michel Campovecchio, Raymond Quéré, Dirk Schwantuschke, Ruediger Quay, et al.. High-Efficiency Power Amplifier MMICs in 100 nm GaN Technology at Ka-band frequencies. 8th European Microwave Integrated Circuits Conference (EuMIC), European Microwave Week (EuMW), Oct 2013, Nuremberg, Germany. pp.492-495. ⟨hal-00911618⟩

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