A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate

B. Belenger; Béatrice Espana; Stanis Courrèges; Pierre Blondy; Olivier Vendier; Dominique Langrez; Jean-Louis Cazaux

Communication dans un congrès

A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate

B. Belenger ¹ Béatrice Espana ¹ Stanis Courrèges ² Pierre Blondy ² Olivier Vendier ¹ Dominique Langrez ¹ Jean-Louis Cazaux ¹

1 TAS - Thales Alenia Space

2 MINACOM

XLIM - XLIM

Abstract : In this paper, the design and measurements of a low-loss radiofrequency (RF) microelectromechanical (MEMS) 2-Bit Ka-Band monolithic Phase-Shifter for high-power application is presented. These micro-strip circuits are fabricated on a 0.254 mm-thick Sapphire substrate and are based on a reflection-type topology which uses 3-dB branch line couplers. The average insertion loss of the circuit is 1.8 dB with a return loss >;7 dB within the aimed frequency range [25.7-27] GHz.

Keywords : Insertion loss Micromechanical devices Microswitches Phase measurement Phase shifters Radio frequency Substrates

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Micro et nanotechnologies/Microélectronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-00923045
Contributeur : Valérie Madrangeas <>
Soumis le : mercredi 1 janvier 2014 - 16:34:04
Dernière modification le : lundi 2 avril 2018 - 18:30:01

A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate

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A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate

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