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Communication dans un congrès

A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate

Abstract : In this paper, the design and measurements of a low-loss radiofrequency (RF) microelectromechanical (MEMS) 2-Bit Ka-Band monolithic Phase-Shifter for high-power application is presented. These micro-strip circuits are fabricated on a 0.254 mm-thick Sapphire substrate and are based on a reflection-type topology which uses 3-dB branch line couplers. The average insertion loss of the circuit is 1.8 dB with a return loss >;7 dB within the aimed frequency range [25.7-27] GHz.
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Communication dans un congrès
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https://hal-unilim.archives-ouvertes.fr/hal-00923045
Contributeur : Valérie Madrangeas <>
Soumis le : mercredi 1 janvier 2014 - 16:34:04
Dernière modification le : lundi 2 avril 2018 - 18:30:01

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  • HAL Id : hal-00923045, version 1

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B. Belenger, Béatrice Espana, Stanis Courrèges, Pierre Blondy, Olivier Vendier, et al.. A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate. Microwave Integrated Circuits Conference (EuMIC), 2011 European, Oct 2011, Manchester, United Kingdom. pp.164 - 167. ⟨hal-00923045⟩

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