A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate

B. Belenger (1) , Béatrice Espana (1) , Stanis Courrèges (2) , Pierre Blondy (2) , Olivier Vendier (1) , Dominique Langrez (1) , Jean-Louis Cazaux (1)

1 TAS - Thales Alenia Space [Toulouse]
2 MINACOM

In this paper, the design and measurements of a low-loss radiofrequency (RF) microelectromechanical (MEMS) 2-Bit Ka-Band monolithic Phase-Shifter for high-power application is presented. These micro-strip circuits are fabricated on a 0.254 mm-thick Sapphire substrate and are based on a reflection-type topology which uses 3-dB branch line couplers. The average insertion loss of the circuit is 1.8 dB with a return loss >;7 dB within the aimed frequency range [25.7-27] GHz.

Mots clés: Insertion loss; Micromechanical devices; Microswitches; Phase measurement; Phase shifters; Radio frequency; Substrates

Domaines: Micro et nanotechnologies/Microélectronique

B. Belenger, Béatrice Espana, Stanis Courrèges, Pierre Blondy, Olivier Vendier, et al.. A high-power Ka-band RF-MEMS 2-bit phase shifter on Sapphire substrate. Microwave Integrated Circuits Conference (EuMIC), 2011 European, Oct 2011, Manchester, United Kingdom. pp.164 - 167. ⟨hal-00923045⟩