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A compact high-isolation DC-50 GHz SP4T RF MEMS switch

Abstract : This paper presents a compact high isolation SP4T series/shunt RF MEMS switch based on a four-pole radial series switch and miniature shunt switches in every arm, all in an area of 860 × 880 µm2, including the CPW port transmission lines. The SP4T series switch achieves a simulated contact force of 0.37-0.56 mN for an actuation voltage of 70-80 V. The miniature shunt switches achieve a simulated contact force of ∼0.1 mN for an actuation voltage of 90 V. The SP4T switch achieves an isolation of 60-32 dB and an insertion loss of 1-2 dB at 8-50 GHz. The switching time is 4-6 µs at 80 V operation. A cold-switched reliability of better than 108 cycles with an RF power of 100 mW and 300 mW has been achieved. The application areas are in wideband TTD phase shifters and X/Ku/Ka-band and V-band switching networks. To our knowledge, this represents the highest isolation wideband SP4T switch achieved to-date, and with excellent impedance match at all ports.
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Contributeur : Valérie Madrangeas Connectez-vous pour contacter le contributeur
Soumis le : jeudi 17 juillet 2014 - 11:48:33
Dernière modification le : mercredi 30 novembre 2022 - 11:22:07




Yang Hyun-Ho, Achref Yahiaoui, Hosein Zareie, Pierre Blondy, Gabriel Rebeiz. A compact high-isolation DC-50 GHz SP4T RF MEMS switch. Microwave Symposium (IMS), 2014 IEEE MTT-S International, Jun 2014, Tampa, FL, United States. pp.1-4, ⟨10.1109/MWSYM.2014.6848359⟩. ⟨hal-01025195⟩



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