A compact high-isolation DC-50 GHz SP4T RF MEMS switch

Yang Hyun-Ho; Achref Yahiaoui; Hosein Zareie; Pierre Blondy; Gabriel Rebeiz

doi:10.1109/MWSYM.2014.6848359

A compact high-isolation DC-50 GHz SP4T RF MEMS switch

Yang Hyun-Ho ¹ Achref Yahiaoui ² Hosein Zareie ¹ Pierre Blondy ² Gabriel Rebeiz ¹

1 UC San Diego - University of California [San Diego]

2 XLIM-MINACOM - MINACOM

XLIM - XLIM

Abstract : This paper presents a compact high isolation SP4T series/shunt RF MEMS switch based on a four-pole radial series switch and miniature shunt switches in every arm, all in an area of 860 × 880 µm2, including the CPW port transmission lines. The SP4T series switch achieves a simulated contact force of 0.37-0.56 mN for an actuation voltage of 70-80 V. The miniature shunt switches achieve a simulated contact force of ∼0.1 mN for an actuation voltage of 90 V. The SP4T switch achieves an isolation of 60-32 dB and an insertion loss of 1-2 dB at 8-50 GHz. The switching time is 4-6 µs at 80 V operation. A cold-switched reliability of better than 108 cycles with an RF power of 100 mW and 300 mW has been achieved. The application areas are in wideband TTD phase shifters and X/Ku/Ka-band and V-band switching networks. To our knowledge, this represents the highest isolation wideband SP4T switch achieved to-date, and with excellent impedance match at all ports.

Keywords : RF MEMS metal-contact switching networks

Type de document :

Communication dans un congrès

Domaine :

Sciences de l'ingénieur [physics] / Electronique

Liste complète des métadonnées

https://hal-unilim.archives-ouvertes.fr/hal-01025195
Contributeur : Valérie Madrangeas <>
Soumis le : jeudi 17 juillet 2014 - 11:48:33
Dernière modification le : mercredi 7 août 2019 - 12:18:06

A compact high-isolation DC-50 GHz SP4T RF MEMS switch

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A compact high-isolation DC-50 GHz SP4T RF MEMS switch

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